Thermal expansion coefficient of ZnSe crystal between 17 and 1080 °C by interferometry

Materials Letters

Volumn 63, Issue 17, 2009, Pages 1475-1477

  Su, Ching Hua ^a   Feth, Shari ^b   Lehoczky, S L ^a  

^a NASA MARSHALL SPACE FLIGHT CENTER   (United States)

^b UNIVERSITY OF ALABAMA IN HUNTSVILLE   (United States)

Author keywords

Semiconductors; Thermal expansion coefficient; Thermal properties; Zinc selenide

Indexed keywords

ESTIMATED ERRORS; FABRY-PEROT INTERFEROMETRIES; HEAT-UP; LINEAR INTERPOLATIONS; SEMICONDUCTORS; THERMAL EXPANSION COEFFICIENT; THERMAL PROPERTIES; ZINC SELENIDE;

CRYSTALS; ELECTRIC CONDUCTIVITY; FABRY-PEROT INTERFEROMETERS; GRAIN BOUNDARIES; INTERFEROMETRY; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR GROWTH; THERMAL STRESS; ZINC;

THERMAL EXPANSION;

EID: 67349150718     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matlet.2009.03.050     Document Type: Article

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