In situ partial pressure measurements and visual observation during crystal growth of ZnSe by seeded physical vapor transport

Journal of Crystal Growth

Volumn 209, Issue 4, 2000, Pages 687-694

  Su, Ching Hua ^a   Feth, S ^a   Lehoczky, S L ^a  

^a NASA MARSHALL SPACE FLIGHT CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; DIFFUSION IN SOLIDS; ETCHING; INDUSTRIAL FURNACES; MASS TRANSFER; MATHEMATICAL MODELS; PARTIAL PRESSURE; PRESSURE MEASUREMENT; SEMICONDUCTOR GROWTH;

DIFFUSION MASS TRANSPORT MODEL; PHYSICAL VAPOR TRANSPORT (PVT); VAPOR GROWTH; ZINC SELENIDE;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0033896068     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00631-4     Document Type: Article

References (12)

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12. C.-H. Su, M.A. George, W. Palosz, S. Feth, S.L. Lehoczky, J. Crystal Growth, submitted for publication.