Investigation of the electronic structure of Me/Al2O3(0 0 0 1) interfaces

Physica B: Condensed Matter

Volumn 404, Issue 14-15, 2009, Pages 2065-2071

  Eremeev, S V ^a,b   Schmauder, S ^c   Hocker, S ^c   Kulkova, S E ^a,b  

^a INSTITUTE OF STRENGTH PHYSICS AND MATERIALS SCIENCE   (Russian Federation)

^b TOMSK STATE UNIVERSITY   (Russian Federation)

^c UNIVERSITY OF STUTTGART   (Germany)

Author keywords

Ab initio calculations; Adhesion; Alumina; Defects; Metal oxide interfaces

Indexed keywords

AB INITIO CALCULATIONS; EFFECT OF OXYGEN; METAL FILM; METAL VACANCIES; METAL-CERAMIC INTERFACE; METAL-OXIDE INTERFACES; OXIDE SUBSTRATES; OXIDE SURFACE; PLANE-WAVE PSEUDOPOTENTIAL METHOD; SURFACE OXYGEN VACANCIES; WORK OF SEPARATION;

ADHESION; DENSITY FUNCTIONAL THEORY; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; METALS; OXIDE FILMS; OXYGEN; OXYGEN VACANCIES; SILVER; SULFUR COMPOUNDS;

ALUMINUM;

EID: 67349096690     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2009.03.043     Document Type: Article

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