Growth kinetic and characterization of tetrapod ZnO nanostructures

Solid State Communications

Volumn 149, Issue 29-30, 2009, Pages 1184-1187

  Hongsith, N ^a,b   Chairuangsri, T ^a   Phaechamud, T ^c   Choopun, S ^a,b  

^a CHIANG MAI UNIVERSITY   (Thailand)

^b Thailand Ministry of Science and Technology   (Thailand)

^c SILPAKORN UNIVERSITY   (Thailand)

Author keywords

A. Nanostructures; A. Semiconductor; B. Crystal growth; C. Scanning and transmission electron microscopy

Indexed keywords

[A] GROWTH MODELS; A. NANOSTRUCTURES; A. SEMICONDUCTOR; ANISOTROPIC GROWTH; B. CRYSTAL GROWTH; C. SCANNING AND TRANSMISSION ELECTRON MICROSCOPY; FOUR-LEG; GROWTH DIRECTIONS; GROWTH MODELS; HEXAGONAL STRUCTURES; NORMAL ATMOSPHERIC PRESSURE; OXIDATION REACTIONS; SYMMETRICAL STRUCTURE; TEM; VAPOR SOLID MECHANISM; XRD; ZINC POWDER; ZNO; ZNO NANOSTRUCTURES;

ATMOSPHERIC PRESSURE; CRYSTAL GROWTH; CRYSTALLIZATION; ELECTRON MICROSCOPES; GALLIUM NITRIDE; GRAIN BOUNDARIES; GRAIN GROWTH; HYDROGEN; HYDROGEN PEROXIDE; NANOSTRUCTURES; ORE TREATMENT; OXIDATION; SCANNING; SEMICONDUCTING GALLIUM; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR GROWTH; TRANSMISSION ELECTRON MICROSCOPY; VAPORS; ZINC; ZINC OXIDE;

THREE DIMENSIONAL;

EID: 67249093746     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2009.04.029     Document Type: Article

References (28)

1. Duan X., and Lieber C.M. Adv. Mater. 12 (2000) 298-302
2. Choopun S., Hongsith N., Tanunchai S., Chairuangsri T., Krua-in C., Singkarat S., Vilaithong T., Mangkorntong P., and Mangkorntong N. J. Cryst. Growth 282 (2005) 365-369
3. Choopun S., Tabata H., and Kawai T. J. Cryst. Growth 274 (2005) 167-172
4. Chen L., Song W., Xie C., Lin L., and Wang J. Mater. Lett. 61 (2007) 4603-4605
5. Zhou Z.W., Chu L.S., Tang W.M., and Gu L.X. J. Electrost. 57 (2003) 347-354
6. Zheng K., Shen H., Li J., Sun D., Chen G., Hou K., Li C., and Lei W. Vacuum 83 (2008) 261-264
7. Yu K., Zhang Y., Xu R., Ouyang S., Li D., Luo L., Zhu Z., Ma J., Xie S., Han S., and Geng H. Mater. Lett. 59 (2005) 1866-1870
8. Dai Y., Zhang Y., Li Q.K., and Nan C.W. Chem. Phys. Lett. 358 (2002) 83-86
9. Roy V.A.L., Djurišić A.B., Chan W.K., Gao J., Lui H.F., and Surya C. Appl. Phys. Lett. 83 (2003) 141-143
10. Wan Q., Yu K., Wang T.H., and Lin C.L. Appl. Phys. Lett. 83 (2003) 2253-2255
11. Yu W.D., Li X.M., and Gao X.D. Appl. Phys. Lett. 84 (2004) 2658-2660
12. Leung Y.H., Djurišić A.B., Gao J., Xie M.H., and Chan W.K. Chem. Phys. Lett. 385 (2004) 155-159
13. Gui Y., and Xie C. Mater. Chem. Phys. 93 (2005) 539-543
14. Ji Z., Zhao S., Wang C., and Liu K. Mater. Sci. Eng., B 117 (2005) 63-66
15. Ronning C., Shang N.G., Gerhards I., Hofsäss H., and Seibt M. J. Appl. Phys. 98 (2005) 034307
16. Nishio K., Isshiki T., Kitano M., and Shiojiri M. Philos. Mag. A 76 (1997) 889-904
17. Iwanaga H., Fujii M., and Takeuchi S. J. Cryst. Growth 134 (1993) 275-280
18. Fujii M., Iwanaga H., Ichihara M., and Takeuchi S. J. Cryst. Growth 128 (1993) 1095-1098
19. Smith T.P., McLean H., Smith D.J., and Davis R.F. J. Cryst. Growth 265 (2004) 390-398
20. D.B. Williams, C.B. Ccarter, Transmission Electron Microscopy, Plenum Press, New York, p. 247
21. Chen Z.G., Ni A., Li F., Cong H., Cheng H.M., and Lu G.Q. Chem. Phys. Lett. 434 (2007) 301-305
22. Wang F.Z., Ye Z.Z., Ma D.W., Zhu L.P., and Zhuge F. Mater. Lett. 59 (2005) 560-563
23. Wang F., Ye Z.Z., Ma D.W., Zhu L.P., and Zhuge F. J. Cryst. Growth 274 (2005) 447-452
24. Dai Z.R., Pan Z.W., and Wang Z.L. Adv. Funct. Mater. 13 (2003) 9-24
25. Choopun S., Hongsith N., Wongrat E., Kamwanna T., Singkarat S., Mangkorntong P., and Mangkorntong N. J. Am. Ceram. Soc. 91 (2008) 174-177
26. Shan F.K., Kim B.I., Liu G.X., Liu Z.F., Sohn J.Y., Lee W.J., Shin B.C., and Yu Y.S. J. Appl. Phys. 95 (2004) 4772-4776
27. Ohnishi T., Ohtomo A., Kawasaki M., Takahashi K., Yoshimoto M., and Koinuma H. Appl. Phys. Lett. 72 (1998) 824-826
28. Chopra K.L., Major S., and Pandaya D.K. Thin Solid Films 102 (1983) 1-46