Investigation of EUV process sensitivities for wafer track processing

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7271, Issue , 2009, Pages

  Bradon, Neil ^a   Weichert, Heiko ^a   Nafus, K ^b   Hatakeyama, S ^b   Kitano, J ^b   Kosugi, H ^b   Yoshihara, K ^b   Goethals, M ^c   Hermans, J ^c  

^a Tokyo Electron Europe Limited   (United Kingdom)

^b TOKYO ELECTRON LTD   (Japan)

^c IMEC   (Belgium)

Author keywords

248nm exposure; CD WiW; Defectivity; Dissolution sensitivity; EUV; Hydrophobicity

Indexed keywords

248NM EXPOSURE; 45NM NODE; CD WIW; CURRENT LIMITATION; DEFECTIVITY; DOUBLE PATTERNING; EUV; EUV RESISTS; LITHOGRAPHIC TECHNOLOGIES; PROCESS APPLICATIONS; PROCESS PARAMETERS; PROCESSING CAPABILITY; PROMISING MATERIALS; ROADMAP; SIMULATION AND MODELING; TRACK PROCESSING; TRADE OFF;

DISSOLUTION; EXTREME ULTRAVIOLET LITHOGRAPHY; HYDROPHOBICITY; NANOTECHNOLOGY; TECHNOLOGICAL FORECASTING; ULTRAVIOLET DEVICES;

TECHNOLOGY;

EID: 67149140487     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.814189     Document Type: Conference Paper

References (1)

1. Fonseca, C. et al, Extraction and identification of resist modeling parameters for EUV lithography SPIE Vol. 6923-30, (2008).