Properties of Co-doped ZnO films prepared by electrochemical deposition

Crystal Research and Technology

Volumn 44, Issue 5, 2009, Pages 517-520

  Wang, Y X ^a   Ding, X ^a   Cheng, Y ^a   Zhang, J ^a   Yang, L L ^a   Liu, H L ^a   Fan, H G ^a   Liu, Y ^a   Yang, J H ^a  

^a JILIN NORMAL UNIVERSITY   (China)

Author keywords

Dilute magnetic semiconductor; Electrochemical deposition; PL; ZnO

Indexed keywords

ATOMIC FORCE MICROSCOPES; BAND GAPS; CO-DOPED ZNO; CO-DOPING; DILUTE MAGNETIC SEMICONDUCTOR; ELECTROCHEMICAL DEPOSITION; FERROMAGNETIC PROPERTIES; HIGH-RESOLUTION TRANSMISSION MICROSCOPIES; IMPURITY PHASE; OPTICAL ABSORPTION; PEAK POSITION; PHOTOLUMINESCENCE MEASUREMENTS; PL; SHORT WAVELENGTHS; VIBRATING SAMPLE MAGNETOMETER; X-RAY ABSORPTION NEAR-EDGE STRUCTURE; ZN ATOMS; ZNO;

ABSORPTION; ABSORPTION SPECTROSCOPY; ATOMIC SPECTROSCOPY; ATOMS; COBALT; DOPING (ADDITIVES); ELECTROCHEMICAL PROPERTIES; ELECTRODEPOSITION; ELECTROMAGNETIC WAVE ABSORPTION; FILM PREPARATION; MAGNETIC SEMICONDUCTORS; METALLIC FILMS; OPTICAL MICROSCOPY; REDUCTION; SEMICONDUCTING ANTIMONY; SEMICONDUCTING ZINC COMPOUNDS; X RAY DIFFRACTION; ZINC; ZINC OXIDE;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 67049146294     PISSN: 02321300     EISSN: 15214079     Source Type: Journal    
DOI: 10.1002/crat.200800466     Document Type: Article

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