Time and exposure dependent x-ray sensitivity in multilayer amorphous selenium detectors

Journal of Physics D: Applied Physics

Volumn 41, Issue 23, 2008, Pages

  Manouchehri, F ^a   Kabir, M Z ^a   Tousignant, O ^b   Mani, H ^b   Devabhaktuni, V K ^a,c  

^a Gina Cody School of Engineering and Computer Science   (Canada)

^b Anrad Corporation   (Canada)

^c UNIVERSITY OF TOLEDO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SELENIUM; BACKWARD EULER; BLOCKING LAYERS; CARRIER DETRAPPING; CONTINUITY EQUATIONS; DEEP TRAPS; ELECTRIC FIELD DISTRIBUTIONS; ELECTRIC FIELD PROFILES; ELECTRON HOLE PAIRS; EXPERIMENTAL DATA; INJECTED CARRIERS; MULTILAYER DETECTORS; NUMERICAL MODELS; POISSON'S EQUATION; RECOVERY TIME; RELATIVE SENSITIVITY; SIMULATION RESULT; THEORETICAL MODELS; TIME-DEPENDENT; TRAP FILLING; TRAPPED CARRIERS; TRAPPED CHARGE; TRAPPING RATE; X-RAY EXPOSURE; X-RAY IMAGING DETECTOR; X-RAY SENSITIVITY;

DETECTORS; ELECTRIC FIELDS; EULER EQUATIONS; MULTILAYERS; POISSON EQUATION; SELENIUM; SEMICONDUCTING SELENIUM COMPOUNDS; STRUCTURAL RELAXATION;

X RAYS;

EID: 66749172121     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/41/23/235106     Document Type: Article

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