60 GHz frequency conversion 90 nm CMOS circuits

2008 European Microwave Integrated Circuit Conference, EuMIC 2008

Volumn , Issue , 2008, Pages 60-63

  Kantanen, Mikko ^a   Holmberg, Jan ^a   Karttaavi, Timo ^b   Volotinen, Juha ^c  

^a VTT TECHNICAL RESEARCH CENTRE OF FINLAND   (Finland)

^b NOKIA RESEARCH CENTER   (United States)

^c AWR APLAC   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

90NM CMOS; CHARACTERISATION; CMOS PROCESS; COMPRESSION POINTS; CONVERSION GAIN; CONVERSION LOSS; DOUBLER; DOWNCONVERSION MIXER; FUNDAMENTAL FREQUENCIES; GHZ FREQUENCIES; INPUT POWER; LOCAL OSCILLATORS; MAXIMUM OUTPUT POWER; POWER CONSUMPTION; SINGLE STAGE; SINGLE-ENDED;

MICROWAVE INTEGRATED CIRCUITS;

ELECTRIC POWER UTILIZATION;

EID: 66649124919     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EMICC.2008.4772228     Document Type: Conference Paper

References (8)

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7. F. Ellinger et al., "30-40 GHz drain-pumped passive mixer MMIC fabricated on VLSI SOI CMOS technology," IEEE Tr. on Microwave Theory and Techniques, vol. 52, pp. 1382-1391, May 2004.
8. B. Floyd, S. Reynolds, U. Pfeiffer, T. Zwick, T. Beukema, and B. Gaucher, "SiGe bipolar transceiver circuits operating at 60 GHz," IEEE J. of Solid-State Circuits, vol. 40, pp. 156-167, January 2005. (Pubitemid 40099925)