A scatterometry-based CD metrology solution for advanced nodes; including capability of handling bi-refringent layers with uniaxial anisotropy

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7272, Issue , 2009, Pages

  Ke, Chin Ming ^a   Hu, Jimmy ^a   Wang, Willie ^a   Huang, Jacky ^a   Chung, H L ^a   Liang, C R ^a   Shih, Victor ^a   Liu, H H ^a   Lee, H J ^a   Lin, John ^a   Fan, Y D ^a   Yen, Tony ^a   Wright, Noelle ^b   Sanchez, Ruben Alvarez ^b   Coene, Wim ^b   Noot, Marc ^b   Yuan, Kiwi ^b   Wang, Vivien ^b   Bhattacharyya, Kaustuve ^b   Van Der Mast, Karel ^b  

^a TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

^b ASML   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION INDEX; CD MEASUREMENTS; CD-METROLOGY; COMPLEX PRODUCTION; IN-PLANE; K-VALUES; MATERIAL PROPERTY; MATRIX; MEASUREMENT METHODS; PATTERNED LAYERS; SCATTEROMETRY; SIDEWALL ANGLES; UNIAXIAL ANISOTROPY;

ANISOTROPY; DATA STORAGE EQUIPMENT; MEASUREMENTS; RESTORATION; TECHNICAL PRESENTATIONS;

PROCESS CONTROL;

EID: 66649086839     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.814909     Document Type: Conference Paper

References (2)

1. Jingmin Leng, J. Opsal, H. Pois: "Optical characterization of 193nm amorphous carbon ARC films", Metrology, Inspection, and Process Control for Microlithography XIX, Proc. of SPIE Vol5752 (2005)
2. Jimmy Hu, C. M. Ke, K. Bhattacharyya et al.: "A comprehensive look at a new metrology technique to support the needs of lithography performance in near future", SPIE Asia (2008)