InP microdisk lasers on silicon wafer: CW room temperature operation at 1.6μm

Electronics Letters

Volumn 37, Issue 4, 2001, Pages 222-223

  Seassal, C ^a   Rojo Romeo, P ^a   Letartre, X ^a   Viktorovitch, P ^a   Hollinger, G ^a   Jalaguier, E ^b   Pocas, S ^b   Aspar, B ^b  

^a ECOLE CENTRALE DE LYON   (France)

^b CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTIONS; HIGH TEMPERATURE OPERATIONS; MOLECULAR BEAM EPITAXY; NANOTECHNOLOGY; OPTICAL PUMPING; PHOTOLUMINESCENCE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR QUANTUM WELLS; SILICON WAFERS;

HYDROPHILIC WAFER BONDING; MICRODISK LASERS;

SEMICONDUCTOR LASERS;

EID: 6644229130     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20010173     Document Type: Article

References (5)

1. FUJITA, M., USHIGOME, R., and BABA, T.: 'Continuous wave lasing in GaInAsP microdisk injection laser with threshold current of 40μA', Electron Lett., 2000, 36, pp. 790-791
2. THIYAGARAJAN, S.M.K., LEVI, A.F.J., LIN, C.K., KIM, I., DAKPUS, P.D., and PEARTON, S.J.: 'Continuous room temperature operation of optically pumped InGaAs/InGaAsP microdisk lasers', Electron Lett., 1998, 34, pp. 2333-2334
3. PAINTER, O., LEE, R.K., SCHERER, A., YARIV, A., O'BRIEN, J.D., DAPKUS, P.D., and KIM, I.: Two-dimensional photonic band-gap defect mode laser', Science, 1999, 284, pp. 1819-1821
4. MALEVILLE, C., RAYSSAC, O., MORICEAU, H., BIASSE, B., BAROUX, L., ASPAR, B., and BRUEL, M.: 'Detailed characterization of wafer bonding mechanisms'. Proc. 4th Int. Symp. Semiconductor Wafer Bonding: Science, Technology and Applications, The Electrochem. Soc. Series, Pennington, 1997, Vol. 97-36, pp. 46-55
5. SEASSAL, C., LETARTRE, X., BRAULT, J., GENDRY, M., POTTIER, P., VIKTOROVITCH, P., PIQUET, O., BLONDY, P., CROS, D., and MARTY, O.: 'InAs quantum wires in InP-based microdisks: mode identification and CW room temperature laser operation', to be published in J. Appl. Phys.