Cs8-xSi46: A type-I clathrate with expanded silicon framework

Chemistry - A European Journal

Volumn 15, Issue 24, 2009, Pages 5901-5903

  Wosylus, Aron ^a   Veremchuk, Igor ^a   Schnelle, Walter ^a   Baitinger, Michael ^a   Schwarz, Ulrich ^a   Grin, Yuri ^a  

^a MAX PLANCK INSTITUTE FOR CHEMICAL PHYSICS OF SOLIDS   (Germany)

Author keywords

Cesium; clathrates; High pressure chemistry; Silicon

Indexed keywords

ANNEALING TIME; CLATHRATES; HIGH DENSITY; HIGH YIELD; HIGH-PRESSURE CHEMISTRY; HIGH-PRESSURE SYNTHESIS; I-PHASE; INTRINSIC PROPERTY; POLYCRYSTALLINE; TEMPERATURE CHARACTERISTIC; TYPE-I CLATHRATE;

ATOMS; CESIUM; CHEMICAL ANALYSIS; CRYSTAL STRUCTURE; GRAIN BOUNDARIES; HYDRATES; RIETVELD METHOD;

SILICON;

EID: 66349114305     PISSN: 09476539     EISSN: 15213765     Source Type: Journal    
DOI: 10.1002/chem.200900307     Document Type: Article

References (35)

1. G. A. Jeffrey in Inclusion Compounds I (Eds.: J. L. Atwood, J. E. D. Davies, D. D. MacNicol), Academic Press, London, 1984, pp. 135 190.
2. H. G. von Schnering, R. Kröner, H. Menke, K. Peters, R. Nesper, Z. Kristallogr. New Cryst. Struct. 1998, 213, 677 677.
3. H. G. von Schnering, Angew. Chem. 1981, 93, 44 63;
4. Angew. Chem. Int. Ed. Engl. 1981, 20, 33 51.
5. S. I. Kurganski, N. A. Borshch, N. S. Pereslavtseva, Semiconductors 2005, 39, 1176 1181.
6. J. S. Kasper, P. Hagenmuller, M. Pouchard, C. Cros, Science 1965, 150, 1713 1714.
7. G. K. Ramachandran, J. Dong, J. Diefenbacher, J. Gryko, R. F. Marzke, O. F. Sankey, P. F. McMillan, J. Solid State Chem. 1999, 145, 716 730.
8. E. Reny, P. Gravereau, C. Cros, M. Pouchard, J. Mater. Chem. 1998, 8, 2839 2844.
9. G. K. Ramachandran, P. F. McMillan, J. Dong, O. F. Sankey, J. Solid State Chem. 2000, 154, 626 634.
10. J. Gallmeier, H. Schüfer, A. Weiss, Z. Naturforsch. B 1969, 24, 665 667.
11. H. Fukuoka, J. Kiyoto, S. Yamanaka, Inorg. Chem. 2003, 42, 2933 2937.
12. S. Yamanaka, E. Enishi, H. Fukuoka, M. Yasukawa, Inorg. Chem. 2000, 39, 56 58.
13. M. Imai, T. Kikegawa, Inorg. Chem. 2008, 47, 8881 8883.
14. S. Bobev, S. C. Sevov, J. Solid State Chem. 2000, 153, 92 105.
15. S. Yamanaka, H. Horie, H. Nakano, M. Ishikawa, Fullerene Sci. Tech. 1995, 3, 21 28.
16. C. Cros, M. Pouchard, P. Hagenmuller, J. Solid State Chem. 1970, 2, 570 581.
17. B. Böhme, A. Guloy, Z. Tang, W. Schnelle, U. Burkhardt, M. Baitinger, Yu. Grin, J. Am. Chem. Soc. 2007, 129, 5348 5349.
18. J. Witte, H. G. von Schnering, Z. Anorg. Allg. Chem. 1964, 327, 260;
19. H. G. von Schnering, M. Schwarz, J.-H. Chang, K. Peters, E.-M. Peters, R. Nesper, Z. Kristallogr. New Cryst. Struct. 2005, 220, 525 527.
20. C. L. Condron, J. Martin, G. S. Nolas, P. M. B. Piccoli, A. J. Schultz, S. M. Kauzlarich, Inorg. Chem. 2006, 45, 9381 9386.
21. Forces in the hydraulic press were redistributed by a Walker module and MgO octahedra (edge length of 18 mm) as pressure media. Elevated temperatures are realized by resistive heating of graphite tubes enclosing the sample crucibles. Pressure and temperature calibration were performed before the experiments by monitoring the resistance changes of Bi and measurements with a W/WRe- thermocouple, respectively.
22. iso=1.01(4), occ.=0.623(5);
23. iso=0.94(4);
24. iso=0.8(2);
25. iso=0.85(5);
26. iso=0.79(10) (see also the Supporting Information S1 4).
27. For interatomic distances see the Supporting Information S5.
28. N. Wiberg, H. Schuster, A. Simon, K. Peters, Angew. Chem. 1986, 98, 100 101;
29. Angew. Chem. Int. Ed. Engl. 1986, 25, 79 80.
30. A. Currao, J. C? urda, R. Nesper, Z. Anorg. Allg. Chem. 1996, 622, 85 94.
31. For details on electrical transport and susceptibility measurements see the Supporting Information S6.
32. NIST Database: http://srmors.nist.gov/.
33. W. Jung, J. Lörincz, R. Ramlau, H. Borrmann, Y. Prots, F. Haarmann, W. Schnelle, U. Burkhardt, M. Baitinger, Yu. Grin, Angew. Chem. 2007, 119, 6846 6850;
34. Angew. Chem. Int. Ed. 2007, 46, 6725 6728.
35. M. Baitinger, H. G. von Schnering, J.-H. Chang, K. Peters, Yu. Grin, Z. Kristallogr. New Cryst. Struct. 2007, 222, 87 88.