Growth and characterization of epitaxial Fe0.8Ga0.2/0.69PMN-0.31PT heterostructures

Journal of Crystal Growth

Volumn 311, Issue 12, 2009, Pages 3235-3238

  Seguin, Dan ^a   Sunder, Madhana ^a   Krishna, Lakshmi ^a   Tatarenko, Alexander ^b   Moran, P D ^a  

^a Michigan Technological University   (United States)

^b OAKLAND UNIVERSITY   (United States)

Author keywords

A1. High resolution X ray diffraction; A1. X ray diffraction; A3. Physical vapor deposition processes; B2. Ferroelectric materials; B2. Magnetic materials

Indexed keywords

A1. HIGH-RESOLUTION X-RAY DIFFRACTION; A1. X-RAY DIFFRACTION; A3. PHYSICAL VAPOR DEPOSITION PROCESSES; B2. FERROELECTRIC MATERIALS; B2. MAGNETIC MATERIALS;

COMPOSITE MICROMECHANICS; CRYSTAL STRUCTURE; CRYSTALS; DIFFRACTION; EPITAXIAL FILMS; EPITAXIAL GROWTH; FERROELECTRIC DEVICES; FERROELECTRIC MATERIALS; FERROELECTRICITY; GALLIUM; MAGNETIC DEVICES; MAGNETIC MATERIALS; PHOTOTRANSISTORS; VAPORS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; X RAYS;

AMORPHOUS FILMS;

EID: 66049119128     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.03.020     Document Type: Article

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