Dielectric and piezoelectric performance of PMN-PT single crystals with compositions around the MPB: Influence of composition, poling field and crystal orientation

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 96, Issue 3, 2002, Pages 254-262

  Zhao, Xiangyong ^a   Fang, Bijun ^a   Cao, Hu ^a   Guo, Yiping ^a   Luo, Haosu ^a  

^a SHANGHAI INSTITUTE OF CERAMICS   (China)

Author keywords

Composition; Crystal orientation; Dielectric and piezoelectric performance; MPB; PMN PT; Poling field

Indexed keywords

COMPOSITION; CRYSTAL MICROSTRUCTURE; CRYSTAL ORIENTATION; OPTICAL MATERIALS; PERMITTIVITY; PHASE TRANSITIONS; PIEZOELECTRICITY;

MORPHOTROPIC PHASE BOUNDARY (MPB);

SINGLE CRYSTALS;

EID: 0036894713     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(02)00354-9     Document Type: Article

References (25)

1. Kuwata J., Uchino K., Nomura S. Jpn. J. Appl. Phys. 21:1982;1298.
2. Choi S.W., Shrout T.R., Jang S.J., Bhalla A.S. Ferroelectrics. 100:1989;29.
3. Shrout T.R., Chang Z.P., Kim N., Markgraf S. Ferroelectr. Lett. 12:1990;63.
4. Service R.E. Science. 275:1997;1878.
5. Fu H., Cohen R.E. Nature. 403:2000;281.
6. Lu Y., Cheng Z.-Y., Park S.-E., Liu S.-F., Zhang Q. Jpn. J. Appl. Phys. Part 1. 39:(1):2000;141-145.
7. Luo H., Xu G., Xu H., Wang P., Yin Z. Jpn. J. Appl. Phys. Part 1. 39:(9B):2000;5581.
8. Cross L.E. Ferroelectrics. 76:1987;241.
9. Ye Z.-G. Key Eng. Mater. 81:1998;155-156.
10. Du X.-H., Belegundu U., Uchino K. Jpn. J. Appl. Phys. Pt. 1. 36:(9A):1997;5580-5587.
11. Wada S., Suzuki S., Nome T., Suzuki T., Osada M., Kakihana N., Park S.E., Cross L.E., Shrout T.R. Jpn. J. Appl. Phys. 38:1999;5505-5511.
12. Du X.-H., Zheng J., Belegundu U., Uchino K. Appl. Phys. Lett. 72:(19):1998;2421-2423.
13. Lu Y., Jeong D.-Y., Cheng Z.-Y., Zhang Q.M. Appl. Phys. Lett. 78:2001;3109-3111.
14. Guo Y., Luo H., He T., Xu H., Yin Z. Jpn. J. Appl. Phys. Part 1. 41:(3A):2002;1-4.
15. G. Xu, H. Luo, H. Xu, Z. Yin, Phys. Rev. B 64 (2) 2001 020102/1-020103/3.
16. Fujishiro K., Vlokh R., Uesu Y., Yamada Y., Kiat J.-M., Dkhil B., Yamashita Y. Jpn. J. Appl. Phys. Part 1. 37:(9B):1998;5246-5248.
17. Durbin M.K., Hicks J.C., Park S.-E., Shrout T.R. J. Appl. Phys. 87:(11):2000;8159-8164.
18. Noheda B., Cox D.E., Shirane G., Park S.-E., Cross L.E., Zhong Z. Phys. Rev. Lett. 86:(17):2001;3891-3894.
19. Noheda B., Gonzalo J.A., Cross L.E., Guo R., Park S.E., Cox D.E., Shirane G. Phys. Rev. B. 61:(13):2001;8687-8694.
20. Zhi-Wen Y., Hao-Su L., Ping-Chu W., Gui-Sheng X. Ferroelectrics. 229:1999;207.
21. Swartz S.L., Shrout T.R. Mater. Res. Bull. 17:1982;1245.
22. Randall C.A., Bhalla A.S., Shrout T.R., Cross L.E. J. Mater. Res. 5:(4):1990;834-859.
23. Kuwabara M., Takahashi S., Goda K., Oshima K., Watanabe K. Jpn. J. Appl. Phys. 31:1992;3241-3244.
24. S.-E. Park, T.R. Shrout, IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control 44 (5) (1997) 1140-1147.
25. Egami T., Teslic S., Dmowski W., Davies P.K., Chen I.-W., Chen H. J. Korean Phys. Soc. 32:1998;S935-S938.