In-plane dielectric properties of epitaxial Ba(Zr0.3Ti0.7)O3 thin film grown on lsat (001) single crystal substrate

Integrated Ferroelectrics

Volumn 93, Issue 1, 2007, Pages 154-160

  Yun, P ^a   Wang, D Y ^a   Ying, Z ^a,b   Song, Z T ^b   Feng, S L ^b   Wang, Y ^a   Chan, H L W ^a  

^a HONG KONG POLYTECHNIC UNIVERSITY   (Hong Kong)

^b SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

Author keywords

BZT thin film; PLD; Tunability

Indexed keywords

BZT THIN FILM; DC BIAS; DC ELECTRIC FIELD; FREQUENCY RANGES; FUNCTION OF FREQUENCY; HIGH TUNABILITY; IN-PLANE; INTERDIGITAL ELECTRODE; PLD; PURE PEROVSKITE PHASE; RELATIVE PERMITTIVITY; ROOM TEMPERATURE; SINGLE CRYSTAL SUBSTRATES; TUNABILITY;

BARIUM; CERAMIC CAPACITORS; DIFFRACTION; ELECTRIC FIELDS; EPITAXIAL GROWTH; GOLD DEPOSITS; HOLOGRAPHIC INTERFEROMETRY; MICROWAVE DEVICES; MICROWAVES; OXIDE MINERALS; PERMITTIVITY; PEROVSKITE; PROGRAMMABLE LOGIC CONTROLLERS; PULSED LASER DEPOSITION; SINGLE CRYSTALS; SUPERCONDUCTING MATERIALS; THIN FILM DEVICES; THIN FILMS;

FILM GROWTH;

EID: 65949104052     PISSN: 10584587     EISSN: 16078489     Source Type: Journal    
DOI: 10.1080/10584580701756698     Document Type: Article

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