Structural, electrical, and optical properties of germanium-doped zno thin films deposited by pulsed laser deposition technique

Integrated Ferroelectrics

Volumn 98, Issue 1, 2008, Pages 199-207

  Shan, F K ^a,b   Liu, G X ^a,b   Lee, W J ^b   Shin, B C ^b   Kim, K H ^c  

^a QINGDAO UNIVERSITY   (China)

^b Dong Eui University   (South Korea)

^c Pusan National University   (South Korea)

Author keywords

AFM; Gemanium doped ZnO; Hall coefficient; PL; PLD; Thin film; XRD

Indexed keywords

AFM; GEMANIUM-DOPED ZNO; HALL COEFFICIENT; PL; PLD; XRD;

ATOMIC FORCE MICROSCOPY; ELECTRIC PROPERTIES; FILM GROWTH; GALVANOMAGNETIC EFFECTS; GERMANIUM; GRAIN GROWTH; GROWTH TEMPERATURE; HALL MOBILITY; METALLIC FILMS; OPTICAL FILMS; OPTICAL PROPERTIES; PROGRAMMABLE LOGIC CONTROLLERS; PULSED LASER DEPOSITION; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR LASERS; SURFACE ROUGHNESS; THIN FILM DEVICES; THIN FILMS; VAPOR DEPOSITION; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; ZINC OXIDE;

DEPOSITION;

EID: 65949086790     PISSN: 10584587     EISSN: 16078489     Source Type: Journal    
DOI: 10.1080/10584580802096127     Document Type: Article

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