Fine trench patterns with double patterning and trench shrink technology

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7273, Issue , 2009, Pages

  Shimura, Satoru ^a   Kushibiki, Masato ^a   Kawasaki, Tetsu ^a   Tanaka, Ryo ^b   Tokui, Akira ^b   Ishii, Yuki ^b  

^a TOKYO ELECTRON LTD   (Japan)

^b NIKON CORPORATION   (Japan)

Author keywords

193nm immersion lithography; 22nm node; 32nm node; Double patterning; Litho etch litho etch (LELE); Overlay

Indexed keywords

193NM IMMERSION LITHOGRAPHY; 22NM NODE; 32NM NODE; DOUBLE PATTERNING; LITHO-ETCH-LITHO-ETCH (LELE); OVERLAY;

CHEMICAL VAPOR DEPOSITION; NANOTECHNOLOGY; PHOTOLITHOGRAPHY; PROBLEM SOLVING; ULTRAVIOLET DEVICES;

TECHNOLOGY;

EID: 65849474395     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.814097     Document Type: Conference Paper

References (1)

1. Tetsu Kawasaki, et. al., "Fabrication of 32nm Contact/via Hole by Photolithographic-friendly Method," Proc. SPIE, 6923-122(2008)