Intermixing-driven scenario for the growth of nanowires on (110) metal surfaces

Physical Review B - Condensed Matter and Materials Physics

Volumn 79, Issue 15, 2009, Pages

  Stepanyuk, Oleg V ^a   Negulyaev, Nikolay N ^b   Ignatiev, Pavel A ^c   Przybylski, Marek ^c   Hergert, Wolfram ^b   Saletsky, Alexander M ^a   Kirschner, Jürgen ^c  

^a MOSCOW STATE UNIVERSITY   (Russian Federation)

^b MARTIN LUTHER UNIVERSITY HALLE WITTENBERG   (Germany)

^c MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 65549127577     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.79.155410     Document Type: Article

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34. We have also tested a 3×3×1 mesh and we have not found any significant changes in the results.
35. An atomic process characterized by the diffusion barrier ED can be either operative or suppressed depending on the experimental conditions (temperature T and flux F). Below we consider that T=290 K, F=0.005 ML/sec. The deposition regime examined within out study is characterized by a typical coverage D∼0.01 ML. Therefore, the characteristic time scale tc of the growth process is D/F∼2 sec. The activation time of the atomic process can be estimated using the expression tD ∼ v0 -1 exp (ED / kB T), where v0 =1× 1012 Hz and kB =0.086 meV/K. The considered event is operative only if tD < tc, otherwise it is suppressed. All atomic processes having activation barriers ED > Ecr =0.71 eV are inhibited at T=290 K and F=0.005 ML/sec. The magnitude of the threshold value Ecr depends on T (Ecr decreases with decreasing T) and flux F (Ecr increases with decreasing F).
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