Electronic structure of p-type (Ga,Fe)N diluted magnetic semiconductors

Journal of Magnetism and Magnetic Materials

Volumn 321, Issue 16, 2009, Pages 2402-2406

  Mounkachi, O ^a   Benyoussef, A ^a,b,c   El Kenz, A ^a   Saidi, E H ^a,b,c  

^a FACULTÉ DES SCIENCES   (Morocco)

^b HASSAN II ACADEMY OF SCIENCE AND TECHNOLOGY   (Morocco)

^c MAScIR   (Morocco)

Author keywords

Acceptor defect; Diluted magnetic semiconductors; First principle calculations; n type (Ga,Fe)N; p type (Ga,Fe)N

Indexed keywords

CALCULATIONS; DEFECTS; ELECTRONIC STRUCTURE; FERROMAGNETIC MATERIALS; FERROMAGNETISM; GROUND STATE; III-V SEMICONDUCTORS; MAGNETIC MOMENTS; MAGNETIC SEMICONDUCTORS; SEMICONDUCTOR DOPING; WIDE BAND GAP SEMICONDUCTORS;

AB INITIO CALCULATIONS; COHERENT-POTENTIAL APPROXIMATION; EXTERNAL MAGNETIC FIELD; FIRST PRINCIPLE CALCULATIONS; KORRINGA-KOHN-ROSTOKER METHOD; MAGNETIC IONS; P-TYPE; P-TYPE GAN;

DILUTED MAGNETIC SEMICONDUCTORS;

EID: 65549126703     PISSN: 03048853     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jmmm.2009.02.140     Document Type: Article

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