Oxygen exchange at the internal surface of amorphous SiO2 studied by photoluminescence of isotopically labeled oxygen molecules

Physical Review Letters

Volumn 102, Issue 17, 2009, Pages

  Kajihara, Koichi ^a,b   Miura, Taisuke ^c   Kamioka, Hayato ^d   Hirano, Masahiro ^a   Skuja, Linards ^a,e   Hosono, Hideo ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b TOKYO METROPOLITAN UNIVERSITY   (Japan)

^c OMRON Laserfront Inc   (Japan)

^d UNIVERSITY OF TSUKUBA   (Japan)

^e UNIVERSITY OF LATVIA   (Latvia)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SIO2; EXCHANGE RATES; FREE DIFFUSIONS; INFRARED PHOTOLUMINESCENCES; INTERNAL SURFACES; INTERSTITIAL OXYGENS; INTERSTITIAL VOIDS; ISOTOPE SHIFTS; ISOTOPICALLY LABELED; OXYGEN EXCHANGES; OXYGEN MOLECULES; SITE TO SITE VARIATIONS; STRUCTURAL DISORDERS; THERMAL-ANNEALING;

ACTIVATION ENERGY; MOLECULES; PHOTOLUMINESCENCE;

OXYGEN;

EID: 65549116851     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.102.175502     Document Type: Article

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