Comment on "deep ultraviolet and near infrared photodiode based on n-ZnO/p -silicon nanowire heterojunction at low temperature" [Appl. Phys. Lett. 94, 013503 (2009)]

Applied Physics Letters

Volumn 94, Issue 16, 2009, Pages

  Lin, Yow Jon ^a  

^a NATIONAL CHANGHUA UNIVERSITY OF EDUCATION   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 65449180308     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3119197     Document Type: Note

References (3)

1. H. Zhou, G. Fang, L. Yuan, C. Wang, X. Yang, H. Huang, C. Zhou, and X. Zhou, Appl. Phys. Lett. 0003-6951 94, 013503 (2009). 10.1063/1.3064161
2. I. S. Jeong, J. H. Kim, and S. Im, Appl. Phys. Lett. 0003-6951 83, 2946 (2003). 10.1063/1.1616663
3. R. S. Ajimsha, M. K. Jayaraj, and L. M. Kukreja, J. Electron. Mater. 0361-5235 37, 770 (2008). 10.1007/s11664-007-0365-4