Etch characteristics of indium zinc oxide thin films using inductively coupled plasma of a Cl2/Ar gas

Thin Solid Films

Volumn 517, Issue 14, 2009, Pages 4047-4051

  Lee, Do Young ^a   Chung, Chee Won ^a  

^a Inha University   (South Korea)

Author keywords

Cl2 Ar; High density plasma reactive ion etching; Indium zinc oxide; Transparent conducting oxide

Indexed keywords

CL2/AR; DC-BIAS VOLTAGES; DEGREE OF ANISOTROPIES; ETCH PROFILES; ETCH RATES; ETCHED SURFACES; HIGH DENSITY PLASMA REACTIVE ION ETCHING; INDIUM ZINC OXIDE; INDUCTIVELY COUPLED-PLASMA REACTIVE ION ETCHINGS; ION-SPUTTERING; REACTIVE IONS; RF-POWER; TRANSPARENT CONDUCTING OXIDE; X-RAY PHOTOELECTRON SPECTROSCOPIES;

ARGON; DRY ETCHING; GASES; INDIUM; INDUCTIVELY COUPLED PLASMA; IONS; OXIDE FILMS; PERMITTIVITY; PHOTORESISTS; PLASMA ETCHING; PRESSURE EFFECTS; SPUTTERING; SURFACE MORPHOLOGY; SURFACE REACTIONS; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC; ZINC OXIDE;

REACTIVE ION ETCHING;

EID: 65449171093     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.01.136     Document Type: Article

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