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Applied Physics Letters

Volumn 94, Issue 17, 2009, Pages

Magnetic tunnel junction sensor with Co/Pt perpendicular anisotropy ferromagnetic layer

(5) Wei, H X a Qin, Q H a Wen, Z C a Han, X F a Zhang, X G b

a INSTITUTE OF PHYSICS (China)

b OAK RIDGE NATIONAL LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL CURRENTS; FERROMAGNETIC LAYERS; FILM PLANES; HIGH-FIELD MEASUREMENTS; IN-PLANE MAGNETIC ANISOTROPIES; LINEAR MAGNETORESISTANCES; MAGNETIC CONFIGURATIONS; MAGNETIC TUNNEL JUNCTION SENSORS; MAGNETIC TUNNEL JUNCTIONS; OUT OF PLANES; PERPENDICULAR ANISOTROPIES; TUNNELING MAGNETORESISTANCES;

ELECTRIC RESISTANCE; FERROMAGNETIC MATERIALS; FERROMAGNETISM; MAGNETIC DEVICES; MAGNETIC FIELD EFFECTS; MAGNETOELECTRONICS; MAGNETORESISTANCE; SEMICONDUCTOR JUNCTIONS; SENSORS; SPACE APPLICATIONS; THREE DIMENSIONAL; TUNNEL JUNCTIONS; TUNNELS; WAVEGUIDE JUNCTIONS;

MAGNETIC ANISOTROPY;

EID: 65449160563 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3126064 Document Type: Article

Times cited : (47)

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