The chemical polishing of semiconductors

Journal of Materials Science

Volumn 10, Issue 2, 1975, Pages 321-339

  Tuck, Brian ^a  

^a UNIVERSITY OF NOTTINGHAM   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICE MANUFACTURE;

SEMICONDUCTOR MATERIALS;

EID: 0016471953     PISSN: 00222461     EISSN: 15734803     Source Type: Journal    
DOI: 10.1007/BF00540357     Document Type: Review

References (102)

1. On the Mechanism of Chemically Etching Germanium and Silicon
2. Photoetching and Plating of Gallium Arsenide
3. Photosensitive Etching of Silicon
4. Preliminary Results on the Oxidation of GaAs and GaP during Chemical Etching
5. Etching of Gallium Arsenide with Nitric Acid
6. Characteristics of the {111} Surfaces of the III–V Irttermetallic Compounds
7. Chemical Etching of Silicon
8. Chemical Etching of Silicon
9. Activation Energies in the Chemical Etching of Semiconductors in HNO[sub 3]-HF-CH[sub 3]COOH
10. Selective Etching of Gallium Arsenide Crystals in H[sub 2]SO[sub 4]-H[sub 2]O[sub 2]-H[sub 2]O System
11. An Improved Polishing Technique for GaAs
12. Room Temperature Chemical Polishing of Ge and GaAs
13. An Electropolishing Technique for Germanium and Silicon
14. The Chemical Polishing of Gallium Arsenide in Bromine-Methanol
15. Chemical Polishing of Cadmium Sulfide
16. The Reaction of Germanium with Aqueous Solutions
17. Etching Behavior of the {110} and {100} Surfaces of InSb
18. Characteristics of the {111} Surfaces of the III–V Intermetallic Compounds
19. Characteristics of the {111}Surfaces of the III–V Intermetallic Compounds
20. Chemical Etching of Silicon
21. Discussion of “Chemical Etching of Silicon, I. The System HF, HNO[sub 3], and H[sub 2]O” [Harry Robbins and Bertram Schwartz (pp. 505–508, Vol. 106, No. 6)]
22. Controlled Etching of Silicon in the HF-HNO[sub 3] System
23. The Reaction of Germanium with Nitric Acid Solutions
24. The Influence of the Complexing Agent Concentration on the Etch Rate of Germanium
25. Chemical Etching of Germanium in Solutions of HF, HNO[sub 3], H[sub 2]O, and HC[sub 2]H[sub 3]O[sub 2]
26. Chemical Etching of Germanium in HF-HNO[sub 3]-H[sub 2]O Solutions
27. Peroxide Etching of Germanium
28. Etching Ge with Mixtures of HF-H[sub 2]O[sub 2]-H[sub 2]O
29. Chemical Etching of Germanium in the System HF-H[sub 2]O[sub 2]-H[sub 2]O
30. A Polishing Etchant for III–V Semiconductors
31. Preferential Etching and Etched Profile of GaAs
32. The Oxidation of GaP and GaAs
33. A Study of the Etching Rate of Single-Crystal Germanium
34. The Defect Structure of GaP Crystals Grown from Gallium Solutions, Vapor Phase and Liquid Phase Epitaxial Deposition
35. Alloying to III–V Compound Surfaces
36. Observation of Etching of n-Type Silicon in Aqueous HF Solutions
37. A Water-Amine-Complexing Agent System for Etching Silicon
38. Junction Delineation in Gallium Arsenide
39. Detection of Striae in GaAs by Chemical Etching
40. The Effect of Ionic Species on the Etching of Germanium
41. Etching Studies of Impurity Precipitates in Pulled GaP Crystals
42. Polishing Damage and Luminescence in p-Type GaAs
43. Messung von Versetzungsgeschwindigkeiten in Germanium