Nitride-based p-i-n photodetectors with Ni catalyst processing

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7216, Issue , 2009, Pages

  Chen, Chin Hsiang ^a  

^a CHENG SHIU UNIVERSITY   (Taiwan)

Author keywords

Catalyst; Ni; Nitride; Photodetectors; Pin

Indexed keywords

ACTIVE LAYERS; CUT-OFF WAVELENGTHS; GAN LAYERS; INTRINSIC LAYERS; NI; NI CATALYSTS; NITRIDE-BASED MATERIALS; OHMIC CHARACTERISTICS; P TYPES; P-I-N PHOTODETECTORS; P-I-N STRUCTURES; PIN; REJECTION RATIOS;

CATALYSIS; CATALYSTS; GALLIUM ALLOYS; GALLIUM NITRIDE; NICKEL; OPTOELECTRONIC DEVICES; SEMICONDUCTING GALLIUM;

PHOTODETECTORS;

EID: 65349135320     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.808536     Document Type: Conference Paper

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