Ultra-low-power differential ISFET/REFET readout circuit

ETRI Journal

Volumn 31, Issue 2, 2009, Pages 243-245

  Thanachayanont, Apinunt ^a   Sirimasakul, Silar ^a  

^a KING MONGKUT'S INSTITUTE OF TECHNOLOGY LADKRABANG   (Thailand)

Author keywords

CMOS; ISFET; Low power; Weak inversion

Indexed keywords

CMOS INTEGRATED CIRCUITS; FIELD EFFECT TRANSISTORS; ION SENSITIVE FIELD EFFECT TRANSISTORS; METALS; MOS DEVICES; OXIDE SEMICONDUCTORS; READOUT SYSTEMS; TIMING CIRCUITS;

COMMON MODE REJECTIONS; DIFFERENTIAL PAIRS; LOW POWER; METAL OXIDE SEMICONDUCTOR; READ-OUT CIRCUIT; TRANSLINEAR CIRCUITS; ULTRA LOW POWER; WEAK INVERSIONS;

LOW POWER ELECTRONICS;

EID: 65249181543     PISSN: 12256463     EISSN: None     Source Type: Journal    
DOI: 10.4218/etrij.09.0208.0368     Document Type: Article

References (4)

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3. L. Shepherd and C. Toumazou, "A Biochemical Translinear Principle with Weak Inversion ISFETs," IEEE Trans. Circuits Syst. - I, vol. 52, no. 12, Dec. 2005, pp. 2614-2619.
4. S. Martinoia and G. Massobrio, "A Behavioral Macromodel of the ISFET in SPICE," Sens. Actuators B. Chem., vol. 62, 2000, pp. 182-189.