Magnetization reversal in exchange biased antidot arrays

Journal of Applied Physics

Volumn 105, Issue 7, 2009, Pages

  Tripathy, D ^a   Adeyeye, A O ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ANTI-DOT ARRAYS; ANTIDOTS; COERCIVITY; CONTINUOUS FILMS; DEEP ULTRAVIOLET LITHOGRAPHIES; DOMAIN SIZES; EXCHANGE BIAS EFFECTS; EXCHANGE-BIAS FIELDS; LATERAL DIMENSIONS; LAYER THICKNESS; MAGNETIZATION - REVERSALS; MAGNETORESISTANCE MEASUREMENTS; NANO-SCALE; PHYSICAL LIMITATIONS; SYSTEMATIC STUDIES;

ELECTRIC RESISTANCE; HYSTERESIS; HYSTERESIS LOOPS; IRIDIUM COMPOUNDS; MAGNETIC FIELD EFFECTS; MAGNETIC MATERIALS; MAGNETIC PROPERTIES; MAGNETORESISTANCE;

MAGNETIZATION REVERSAL;

EID: 65249178493     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3056400     Document Type: Article

References (18)

1. J. Nogús and I. K. Schuller, J. Magn. Magn. Mater. 0304-8853 10.1016/S0304-8853(98)00266-2 192, 203 (1999); A. E. Berkowitz and K. Takano, J. Magn. Magn. Mater. 0304-8853 10.1016/S0304-8853(99)00453-9 200, 552 (1999); R. L. Stamps, J. Phys. D: Appl. Phys. 33, R247 (2000).
2. M. D. Stiles and R. D. McMichael, Phys. Rev. B 63, 064405 (2001).
3. S. S. P. Parkin, X. Jiang, C. Kaiser, A. Panchula, K. Roche, and M. Samant, Proc. IEEE 91, 661 (2003).
4. K. Liu, J. Nogús, C. Leighton, H. Masuda, K. Nishio, I. V. Roshchin, and I. K. Schuller, Appl. Phys. Lett. 81, 4434 (2002).
5. V. Skumryev, S. Stoyanov, Y. Zhang, G. Hadjipanayis, D. Givord, and J. Nogús, Nature (London) 423, 850 (2003).
6. M. Fraune, U. Rüdiger, G. Güntherodt, S. Cardoso, and P. Freitas, Appl. Phys. Lett. 77, 3815 (2000).
7. K. Liu, S. M. Baker, M. Tuominen, T. P. Russell, and I. K. Schuller, Phys. Rev. B 63, 060403 (R) (2001).
8. V. Baltz, J. Sort, S. Landis, B. Rodmacq, and B. Dieny, Phys. Rev. Lett. 94, 117201 (2005).
9. J. Nogús, J. Sort, V. Langlais, V. Skumryev, S. Suriach, J. S. Muoz, and M. D. Baró, Phys. Rep. 422, 65 (2005).
10. G. Malinowski, M. Albrecht, I. L. Guhr, J. M. D. Coey, and S. van Dijken, Phys. Rev. B 75, 012413 (2007).
11. D. Tripathy, A. O. Adeyeye, and N. Singh, Appl. Phys. Lett. 93, 022502 (2008).
12. N. Singh, S. Goolaup, and A. O. Adeyeye, Nanotechnology 15, 1539 (2004).
13. C. C. Wang, A. O. Adeyeye, Y. H. Wu, and M. B. A. Jalil, J. Appl. Phys. 97, 023521 (2005).
14. A. P. Malozemoff, Phys. Rev. B 35, 3679 (1987).
15. Z. Li and S. F. Zhang, Appl. Phys. Lett. 77, 423 (2000).
16. J. Sort, H. Glaczynska, U. Ebels, B. Dieny, M. Giersig, and J. Rybczynski, J. Appl. Phys. 95, 7516 (2004).
17. C. C. Wang, A. O. Adeyeye, and N. Singh, Nanotechnology 17, 1629 (2006).
18. M. Ali, C. H. Marrows, M. Al-Jawad, B. J. Hickey, A. Misra, U. Nowak, and K. D. Usadel, Phys. Rev. B 68, 214420 (2003).