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Journal of Applied Physics

Volumn 105, Issue 7, 2009, Pages

Distinction and correlation between magnetization switchings driven by spin transfer torque and applied magnetic field

(2) Zhu, Xiaochun a Kang, Seung H a

a QUALCOMM INC (United States)

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED MAGNETIC FIELDS; EDGE ROUGHNESS; HIGH ORDERS; MAGNETIC TUNNEL JUNCTIONS; MAGNETIZATION - REVERSALS; MAGNETIZATION SWITCHING; MAGNETO-RESISTIVE RANDOM ACCESS MEMORIES; MICRO-MAGNETIC SIMULATIONS; SHORT PULSE; SPIN TRANSFERS; SPIN-TRANSFER TORQUES; SPIN-WAVE MODES; SWITCHING CURRENTS; SWITCHING FIELDS; THERMALLY ACTIVATED;

ASPECT RATIO; MAGNETIC FIELDS; MAGNETS; RANDOM ACCESS STORAGE; SEMICONDUCTOR JUNCTIONS; SPIN DYNAMICS; SPIN WAVES; SWITCHING; TUNNEL JUNCTIONS; WAVEGUIDE JUNCTIONS;

MAGNETIZATION REVERSAL;

EID: 65249159783 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3059212 Document Type: Article

Times cited : (5)

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