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Volumn 311, Issue 8, 2009, Pages 2327-2335

On crucible effects during the growth of cadmium zinc telluride in an electrodynamic gradient freeze furnace

Author keywords

A1. Computer simulation; A1. Convection; A1. Heat transfer; A2. Bridgman technique; A2. Growth from melt; B1. Cadmium compounds

Indexed keywords

A1. COMPUTER SIMULATION; A1. CONVECTION; A1. HEAT TRANSFER; A2. BRIDGMAN TECHNIQUE; A2. GROWTH FROM MELT; B1. CADMIUM COMPOUNDS;

EID: 65249158562     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.01.141     Document Type: Article
Times cited : (35)

References (50)
  • 1
    • 0016071415 scopus 로고
    • Undoped high-resistivity cadmium telluride for nuclear radiation detectors
    • Triboulet R., Marfaing Y., Cornet A., and Siffert P. Undoped high-resistivity cadmium telluride for nuclear radiation detectors. J. Appl. Phys. 45 (1974) 2759-2765
    • (1974) J. Appl. Phys. , vol.45 , pp. 2759-2765
    • Triboulet, R.1    Marfaing, Y.2    Cornet, A.3    Siffert, P.4
  • 6
    • 65249185091 scopus 로고    scopus 로고
    • R.B. James, P. Siffert, Room temperature semiconductor detectors, in: R.B. James, P. Siffert (Eds.), Proceedings of the 11th International Workshop on Room Temperature Semiconductor X- and Gamma-ray Detectors and Associated Electronics, Nucl. Instrum. Methods A 458 (2001).
    • R.B. James, P. Siffert, Room temperature semiconductor detectors, in: R.B. James, P. Siffert (Eds.), Proceedings of the 11th International Workshop on Room Temperature Semiconductor X- and Gamma-ray Detectors and Associated Electronics, Nucl. Instrum. Methods A 458 (2001).
  • 11
    • 27344453830 scopus 로고    scopus 로고
    • Fundamentals of the CdTe and CdZnTe bulk growth
    • Triboulet R. Fundamentals of the CdTe and CdZnTe bulk growth. Phys. Status Solidi C 2 (2005) 1556-1565
    • (2005) Phys. Status Solidi C , vol.2 , pp. 1556-1565
    • Triboulet, R.1
  • 13
    • 0032583020 scopus 로고    scopus 로고
    • Ab initio molecular dynamics simulation of liquid CdTe and GaAs: semiconducting versus metallic behavior
    • Godlevsky V.V., Derby J.J., and Chelikowsky J.R. Ab initio molecular dynamics simulation of liquid CdTe and GaAs: semiconducting versus metallic behavior. Phys. Rev. Lett. 81 (1998) 4959-4962
    • (1998) Phys. Rev. Lett. , vol.81 , pp. 4959-4962
    • Godlevsky, V.V.1    Derby, J.J.2    Chelikowsky, J.R.3
  • 14
    • 0000976452 scopus 로고
    • Effect of variable thermal conductivity on isotherms in Bridgman growth
    • Naumann R.J., and Lehoczky S.L. Effect of variable thermal conductivity on isotherms in Bridgman growth. J. Cryst. Growth 61 (1983) 707-710
    • (1983) J. Cryst. Growth , vol.61 , pp. 707-710
    • Naumann, R.J.1    Lehoczky, S.L.2
  • 15
    • 0000288977 scopus 로고
    • Heat transfer analysis of the Bridgman-Stockbarger configuration for crystal growth ii: analytical treatment of radial temperature variations
    • Jasinski T., Rosenow W.M., and Witt A.F. Heat transfer analysis of the Bridgman-Stockbarger configuration for crystal growth ii: analytical treatment of radial temperature variations. J. Cryst. Growth 67 (1984) 173-184
    • (1984) J. Cryst. Growth , vol.67 , pp. 173-184
    • Jasinski, T.1    Rosenow, W.M.2    Witt, A.F.3
  • 16
    • 0002533411 scopus 로고
    • Principles of solidification
    • Gilman J.J. (Ed), Wiley, New York
    • Tiller W.A. Principles of solidification. In: Gilman J.J. (Ed). The Art and Science of Growing Crystals (1963), Wiley, New York 276
    • (1963) The Art and Science of Growing Crystals , pp. 276
    • Tiller, W.A.1
  • 18
    • 0025258247 scopus 로고
    • Meeting device needs through melt growth of large-diameter elemental and compound semiconductors
    • Thomas R.N., Hobgood H.M., Ravishankar P.S., and Braggins T.T. Meeting device needs through melt growth of large-diameter elemental and compound semiconductors. J. Cryst. Growth 99 (1990) 643-653
    • (1990) J. Cryst. Growth , vol.99 , pp. 643-653
    • Thomas, R.N.1    Hobgood, H.M.2    Ravishankar, P.S.3    Braggins, T.T.4
  • 19
    • 0026866397 scopus 로고
    • Measured critical resolved shear stress and calculated temperature and stress fields during growth of CdZnTe measured critical resolved shear stress and calculated temperature and stress fields during growth of CdZnTe
    • Parfeniuk C., Weinberg F., Samarasekera I.V., Schvezov C., and Li L. Measured critical resolved shear stress and calculated temperature and stress fields during growth of CdZnTe measured critical resolved shear stress and calculated temperature and stress fields during growth of CdZnTe. J. Cryst. Growth 119 (1992) 261-270
    • (1992) J. Cryst. Growth , vol.119 , pp. 261-270
    • Parfeniuk, C.1    Weinberg, F.2    Samarasekera, I.V.3    Schvezov, C.4    Li, L.5
  • 21
    • 0036816251 scopus 로고    scopus 로고
    • Advances in the crystal growth of semi-insulating CdZnTe for radiation detector applications
    • Szeles C., Cameron S.E., Ndap J.-O., and Chalmers W.C. Advances in the crystal growth of semi-insulating CdZnTe for radiation detector applications. IEEE Trans. Nucl. Sci. 49 (2002) 2535
    • (2002) IEEE Trans. Nucl. Sci. , vol.49 , pp. 2535
    • Szeles, C.1    Cameron, S.E.2    Ndap, J.-O.3    Chalmers, W.C.4
  • 22
    • 3042835524 scopus 로고    scopus 로고
    • The development of high-pressure electro-dynamic gradient crystal growth technology for semi-insulating CdZnTe growth for radiation detector applications
    • Szeles C., Cameron S.E., Soldner S.A., Ndap J.-O., and Reed M.D. The development of high-pressure electro-dynamic gradient crystal growth technology for semi-insulating CdZnTe growth for radiation detector applications. J. Electron. Mater. 33 (2004) 742-752
    • (2004) J. Electron. Mater. , vol.33 , pp. 742-752
    • Szeles, C.1    Cameron, S.E.2    Soldner, S.A.3    Ndap, J.-O.4    Reed, M.D.5
  • 23
    • 84985841822 scopus 로고
    • Changes of growth conditions in the vertical Bridgman-Stockbarger method for the solidification of aluminum
    • Bartholomew D.M.L., and Hellawell A. Changes of growth conditions in the vertical Bridgman-Stockbarger method for the solidification of aluminum. J. Cryst. Growth 50 (1980) 453-460
    • (1980) J. Cryst. Growth , vol.50 , pp. 453-460
    • Bartholomew, D.M.L.1    Hellawell, A.2
  • 24
    • 0001445752 scopus 로고
    • Deviation of freezing rate from translation rate in the Bridgman-Stockbarger technique i. Very low translation rates
    • Sukanek P.C. Deviation of freezing rate from translation rate in the Bridgman-Stockbarger technique i. Very low translation rates. J. Cryst. Growth 58 (1982) 208-218
    • (1982) J. Cryst. Growth , vol.58 , pp. 208-218
    • Sukanek, P.C.1
  • 25
    • 0038497435 scopus 로고
    • Deviation of freezing rate from translation rate in the Bridgman-Stockbarger technique: II. Moderate translation rates
    • Sukanek P.C. Deviation of freezing rate from translation rate in the Bridgman-Stockbarger technique: II. Moderate translation rates. J. Cryst. Growth 58 (1982) 219-228
    • (1982) J. Cryst. Growth , vol.58 , pp. 219-228
    • Sukanek, P.C.1
  • 26
    • 0000516436 scopus 로고
    • Heat transfer analysis of the Bridgman-Stockbarger configuration for crystal growth: I. Analytical treatment of the axial temperature profile
    • Jasinski T., Rohsenow W.M., and Witt A.F. Heat transfer analysis of the Bridgman-Stockbarger configuration for crystal growth: I. Analytical treatment of the axial temperature profile. J. Cryst. Growth 61 (1983) 339-354
    • (1983) J. Cryst. Growth , vol.61 , pp. 339-354
    • Jasinski, T.1    Rohsenow, W.M.2    Witt, A.F.3
  • 29
    • 0026843329 scopus 로고
    • Interface shape observation and calculation in crystal growth of CdTe by the vertical Bridgman method
    • Pfeiffer M., and Mühlberg M. Interface shape observation and calculation in crystal growth of CdTe by the vertical Bridgman method. J. Cryst. Growth 118 (1992) 269
    • (1992) J. Cryst. Growth , vol.118 , pp. 269
    • Pfeiffer, M.1    Mühlberg, M.2
  • 30
    • 0026866397 scopus 로고
    • Measured critical resolved shear stress and calculated temperature and stress fields during growth of CdZnTe
    • Parfeniuk C., Weinberg F., Samarasekera I.V., Schvezov C., and Li L. Measured critical resolved shear stress and calculated temperature and stress fields during growth of CdZnTe. J. Cryst. Growth 119 (1992) 261
    • (1992) J. Cryst. Growth , vol.119 , pp. 261
    • Parfeniuk, C.1    Weinberg, F.2    Samarasekera, I.V.3    Schvezov, C.4    Li, L.5
  • 31
    • 0029388817 scopus 로고
    • Modeling the vertical Bridgman growth of cadmium zinc telluride I. Quasi-steady analysis of heat transfer and convection
    • Kuppurao S., Brandon S., and Derby J.J. Modeling the vertical Bridgman growth of cadmium zinc telluride I. Quasi-steady analysis of heat transfer and convection. J. Cryst. Growth 155 (1995) 93-102
    • (1995) J. Cryst. Growth , vol.155 , pp. 93-102
    • Kuppurao, S.1    Brandon, S.2    Derby, J.J.3
  • 32
    • 0029388185 scopus 로고
    • Modeling the vertical Bridgman growth of cadmium zinc telluride II. Transient analysis of zinc segregation
    • Kuppurao S., Brandon S., and Derby J.J. Modeling the vertical Bridgman growth of cadmium zinc telluride II. Transient analysis of zinc segregation. J. Cryst. Growth 155 (1995) 103-111
    • (1995) J. Cryst. Growth , vol.155 , pp. 103-111
    • Kuppurao, S.1    Brandon, S.2    Derby, J.J.3
  • 33
    • 0030085834 scopus 로고    scopus 로고
    • Analysis of interrupted growth strategies for cadmium zinc telluride in an unseeded vertical Bridgman system
    • Kuppurao S., Brandon S., and Derby J.J. Analysis of interrupted growth strategies for cadmium zinc telluride in an unseeded vertical Bridgman system. J. Cryst. Growth 158 (1996) 459
    • (1996) J. Cryst. Growth , vol.158 , pp. 459
    • Kuppurao, S.1    Brandon, S.2    Derby, J.J.3
  • 34
    • 0031103192 scopus 로고    scopus 로고
    • Designing thermal environments to promote convex interface shapes during the vertical Bridgman growth of cadmium zinc telluride
    • Kuppurao S., and Derby J.J. Designing thermal environments to promote convex interface shapes during the vertical Bridgman growth of cadmium zinc telluride. J. Cryst. Growth 172 (1997) 350
    • (1997) J. Cryst. Growth , vol.172 , pp. 350
    • Kuppurao, S.1    Derby, J.J.2
  • 35
    • 0031195450 scopus 로고    scopus 로고
    • Understanding horizontal Bridgman shelf growth of cadmium telluride and cadmium zinc telluride I. Heat and momentum transfer
    • Edwards K., and Derby J.J. Understanding horizontal Bridgman shelf growth of cadmium telluride and cadmium zinc telluride I. Heat and momentum transfer. J. Cryst. Growth 179 (1997) 120
    • (1997) J. Cryst. Growth , vol.179 , pp. 120
    • Edwards, K.1    Derby, J.J.2
  • 36
    • 0031195449 scopus 로고    scopus 로고
    • Understanding horizontal Bridgman shelf growth of cadmium telluride and cadmium zinc telluride II. Thermoelastic stresses
    • Edwards K., and Derby J.J. Understanding horizontal Bridgman shelf growth of cadmium telluride and cadmium zinc telluride II. Thermoelastic stresses. J. Cryst. Growth 179 (1997) 133
    • (1997) J. Cryst. Growth , vol.179 , pp. 133
    • Edwards, K.1    Derby, J.J.2
  • 37
    • 0033207285 scopus 로고    scopus 로고
    • Transient effects during the horizontal Bridgman growth of cadmium zinc telluride
    • Edwards K., and Derby J.J. Transient effects during the horizontal Bridgman growth of cadmium zinc telluride. J. Cryst. Growth 206 (1999) 37-50
    • (1999) J. Cryst. Growth , vol.206 , pp. 37-50
    • Edwards, K.1    Derby, J.J.2
  • 38
    • 0032598207 scopus 로고    scopus 로고
    • Numerical simulation of THM growth of CdTe in presence of rotating magnetic field (RMF)
    • Ghaddar C.K., Lee C.K., Motakef S., and Gillies D.C. Numerical simulation of THM growth of CdTe in presence of rotating magnetic field (RMF). J. Cryst. Growth 205 (1999) 97-111
    • (1999) J. Cryst. Growth , vol.205 , pp. 97-111
    • Ghaddar, C.K.1    Lee, C.K.2    Motakef, S.3    Gillies, D.C.4
  • 39
    • 0038188462 scopus 로고    scopus 로고
    • A three-dimensional numerical simulation model for the growth of CdTe single crystals by the travelling heated method under magnetic field
    • Liu Y., Dost S., Lent B., and Redden R. A three-dimensional numerical simulation model for the growth of CdTe single crystals by the travelling heated method under magnetic field. J. Cryst. Growth 254 (2003) 285-297
    • (2003) J. Cryst. Growth , vol.254 , pp. 285-297
    • Liu, Y.1    Dost, S.2    Lent, B.3    Redden, R.4
  • 40
    • 1342304964 scopus 로고    scopus 로고
    • Three-dimensional imperfections in a model vertical Bridgman growth system cadmium zinc telluride
    • Yeckel A., Compere G., Pandy A., and Derby J.J. Three-dimensional imperfections in a model vertical Bridgman growth system cadmium zinc telluride. J. Cryst. Growth 263 (2004) 629-644
    • (2004) J. Cryst. Growth , vol.263 , pp. 629-644
    • Yeckel, A.1    Compere, G.2    Pandy, A.3    Derby, J.J.4
  • 43
    • 34047254279 scopus 로고    scopus 로고
    • A new hybrid method for the global modeling of convection in cz crystal growth configurations
    • Fainberg J., Vizman D., Friedrich J., and Mueller G. A new hybrid method for the global modeling of convection in cz crystal growth configurations. J. Cryst. Growth 303 1 (2007) 124-134
    • (2007) J. Cryst. Growth , vol.303 , Issue.1 , pp. 124-134
    • Fainberg, J.1    Vizman, D.2    Friedrich, J.3    Mueller, G.4
  • 46
    • 77956902592 scopus 로고
    • Dislocations and plastic flow in the diamond structure
    • Alexander H., and Haasen P. Dislocations and plastic flow in the diamond structure. Solid State Phys. 22 (1968) 27-158
    • (1968) Solid State Phys. , vol.22 , pp. 27-158
    • Alexander, H.1    Haasen, P.2
  • 47
    • 0024737777 scopus 로고
    • A new model for the calculation of dislocation formation in semiconductor melt growth by taking into account the dynamics of plastic deformation
    • Völkl J., and Müller G. A new model for the calculation of dislocation formation in semiconductor melt growth by taking into account the dynamics of plastic deformation. J. Cryst. Growth 97 (1989) 136
    • (1989) J. Cryst. Growth , vol.97 , pp. 136
    • Völkl, J.1    Müller, G.2
  • 48
    • 0026412513 scopus 로고
    • On the prediction of dislocation formation in semiconductor crystals grown from the melt: analysis of Haasen model for plastic deformation dynamics
    • Maroudas D., and Brown R.A. On the prediction of dislocation formation in semiconductor crystals grown from the melt: analysis of Haasen model for plastic deformation dynamics. J. Cryst. Growth 108 (1991) 399
    • (1991) J. Cryst. Growth , vol.108 , pp. 399
    • Maroudas, D.1    Brown, R.A.2
  • 49
    • 0027109609 scopus 로고
    • Prediction of dislocation generation during Bridgman growth of GaAs crystals
    • Tsai C.T., Yao M.W., and Chait A. Prediction of dislocation generation during Bridgman growth of GaAs crystals. J. Cryst. Growth 125 (1992) 69
    • (1992) J. Cryst. Growth , vol.125 , pp. 69
    • Tsai, C.T.1    Yao, M.W.2    Chait, A.3
  • 50
    • 0000058992 scopus 로고
    • Hurle D.T.J. (Ed), North-Holland, Amsterdam
    • Völkl J. In: Hurle D.T.J. (Ed). Handbook of Crystal Growth vol. 2b (1994), North-Holland, Amsterdam 821
    • (1994) Handbook of Crystal Growth , vol.2 b , pp. 821
    • Völkl, J.1


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