Quantum criticality perspective on the charging of narrow quantum-dot levels

Physical Review Letters

Volumn 102, Issue 13, 2009, Pages

  Kashcheyevs, V ^a   Karrasch, C ^b   Hecht, T ^c   Weichselbaum, A ^c   Meden, V ^b   Schiller, A ^d  

^a UNIVERSITY OF LATVIA   (Latvia)

^b RWTH AACHEN UNIVERSITY   (Germany)

^c UNIVERSITY OF MUNICH   (Germany)

^d HEBREW UNIVERSITY OF JERUSALEM   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYTICAL EXPRESSIONS; BOSONIZATION; CAPACITIVE COUPLINGS; CAPACITIVELY COUPLED; FUNCTIONAL RENORMALIZATION; GENERIC MODELS; KONDO MODELS; LOW ENERGIES; MESOSCOPIC PHYSICS; POWER-LAW FASHIONS; QUANTUM CRITICALITIES; QUANTUM DOTS; TUNNELING AMPLITUDES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 64649085474     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.102.136805     Document Type: Article

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