0.5 nm EOT low leakage ALD SrTiO3 on TiN MIM capacitors for DRAM applications

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2008, Pages

  Menou, N ^a   Wang, X P ^a   Kaczer, B ^a   Polspoel, W ^a   Popovici, M ^a   Opsomer, K ^a   Pawlak, M A ^a   Knaepen, W ^b   Detavernier, C ^b   Blomberg, T ^c   Pierreux, D ^d   Swerts, J ^d   Maes, J W ^c   Favia, P ^a   Bender, H ^a   Brijs, B ^a   Vandervorst, W ^a   Van Elshocht, S ^a   Wouters, D J ^a   Biesemans, S ^a   Kittl, J A ^a   more..

^a IMEC   (Belgium)

^b GHENT UNIVERSITY   (Belgium)

^c ASM Microchemistry ^*  (Finland)

^d ASM BELGIUM   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

BOTTOM ELECTRODES; DEPOSITION PROCESS; DEPOSITION TECHNIQUES; HIGH ASPECT RATIOS; LEAKAGE REDUCTIONS; LOW LEAKAGES; LOW TEMPERATURES; METAL ELECTRODES; MIM CAPACITORS; PROCESS OPTIMIZATIONS; PROCESSING CONDITIONS; TIME RECORDS; TIN ELECTRODES;

ASPECT RATIO; CAPACITANCE; CAPACITORS; DYNAMIC RANDOM ACCESS STORAGE; ELECTRON DEVICES; PHOTORESISTS; PLATINUM; PRECIOUS METALS; STRONTIUM ALLOYS; TIN; TITANIUM COMPOUNDS; TITANIUM NITRIDE;

MIM DEVICES;

EID: 64549148793     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2008.4796852     Document Type: Conference Paper

References (2)

1. S. W. Lee et al., Appl. Phys. Lett. 92, 222903 (2008)
2. O. S. Kwon et al, J. Electrochem. Soc. 154, G127 (2007)