A novel, rigorous approach to the dynamic, large-signal stability analysis of semiconductor devices and circuits under electro-thermal interaction

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2008, Pages

  Cappelluti, F ^a   Traversa, F L ^a   Bonani, F ^a   Ghione, G ^a  

^a POLITECNICO DI TORINO   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAAS/GAAS; CURRENT GAINS; HARMONIC BALANCE TECHNIQUES; LARGE SIGNALS; LARGE-SIGNAL STABILITIES; MULTIFINGER; NUMERICAL APPROACHES; PERIODIC CONDITIONS; RIGOROUS APPROACHES; THERMAL INTERACTIONS; TIME-DOMAIN CALCULATIONS;

ELECTRIC CONDUCTIVITY; ELECTRON DEVICES; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR SWITCHES;

CONVERGENCE OF NUMERICAL METHODS;

EID: 64549093219     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2008.4796788     Document Type: Conference Paper

References (8)

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