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Volumn 130, Issue 13, 2009, Pages

Theoretical prediction of atomic and electronic structure of neutral Si6 Om (m=1-11) clusters

Author keywords

[No Author keywords available]

Indexed keywords

CLUSTER STRUCTURES; DENSITY FUNCTIONAL; DISSOCIATION ENERGIES; ENERGY FUNCTIONS; FRAGMENTATION CHANNELS; HIGHEST OCCUPIED MOLECULAR ORBITALS; LOWEST UN-OCCUPIED MOLECULAR ORBITALS; OXIDE CLUSTERS; POLARIZABILITIES; SEMI-EMPIRICAL; STABLE STRUCTURES; STRUCTURAL MOTIFS; THEORETICAL PREDICTIONS;

EID: 64549086324     PISSN: 00219606     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3080549     Document Type: Article
Times cited : (11)

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    • The VEA and adiabatic (AEA), calculated with different methods of DFT are: 0.958 eV (VEA), 1.089 eV (AEA) for Si6 O7 and 0.907 eV (VEA), 0.971 eV (AEA) for Si6 O9, employing the B3LYP functional. They are instead, 1.024 eV (VEA), 1.184 eV (AEA) for Si6 O7 and 0.951 eV (VEA), 1.011 eV (AEA) for Si6 O9, employing the B3PWN functional. Therefore, Si6 O8 may be considered as a particular case for this property and the use of B3LYP o B3PWN is similar for the other systems considered in this manuscript.
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