Optical interferometry investigation of internal stress and opto-mechanical characteristics of silicon oxynitride thin films fabricated by PECVD

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4755, Issue , 2002, Pages 760-764

  Józwik, Michał ^a   Sabac, Andrei ^a   Gorecki, Christophe ^a  

^a UNIVERSITÉ DE FRANCHE COMTÉ   (France)

Author keywords

Interferometry; MEMS MOEMS testing; PECVD; Residual stress; Silicon membranes

Indexed keywords

COMPOSITE MICROMECHANICS; DEPOSITION; ETCHING; INTERFEROMETRY; MICROMACHINING; MICROOPTICS; OPTICAL TESTING; OPTICAL WAVEGUIDES; OPTOELECTRONIC DEVICES; PHOTOLITHOGRAPHY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; QUALITY CONTROL; RESIDUAL STRESSES; SILICON COMPOUNDS; THIN FILMS;

OPTO-MECHANICAL PROPERTIES;

MICROELECTROMECHANICAL DEVICES;

EID: 6444245232     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.462881     Document Type: Article

References (6)

1. Modern trends in microstructures and integrated optics for communication, sensing, and actuation
2. Silicon-based integrated interferometer with phase modulation driven by acoustic surface waves
3. The hydrogen content of plasma-deposited silicon nitride
4. Characterisation of internal stress of silicon oxinitride thin films fabricated by plasma-enhanced chemical vapour deposition: Applications in Integrated Optics
5. Analysis of the mechanical behaviour of shape memory polymer membranes by nanoindentation, bulging and point membrane deflection tests
6. Spatial phase measurement methods