Electrical isolation of InP and InGaAs using iron and krypton

Electronics Letters

Volumn 40, Issue 20, 2004, Pages 1302-1304

  Too, P ^a   Ahmed, S ^a   Gwilliam, R ^a   Sealy, B J ^a  

^a UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC POTENTIAL; ELECTRON MOBILITY; ETCHING; IRON; KRYPTON; LIGHT EMITTING DIODES; PHOTOLITHOGRAPHY; THERMOANALYSIS;

ANNEALING TEMPERATURE; ELECTRIC ISOLATION; IRON IMPLANTATION; SHEET RESISTANCE;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 6444226702     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20045922     Document Type: Article

References (10)

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5. 0.47As'. Proc. 10th Int. Conf. on Semi. and Insul. Mat. (SIMC-X), 1988, pp. 29-32
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10. Kadoun, A., et al.: 'Study of deep level defect behaviour in rapid thermal annealed Fe-doped semi-insulating InP', Mater. Sci. Eng. B, 1995, 33, pp. 188-191