Positron beam study of Co doped ZnO films prepared by PLD

Materials Science Forum

Volumn 607, Issue , 2009, Pages 102-104

  Hongfeng, Ren ^a   Huimin, Weng ^a   Bangjiao, Ye ^a   Rongdian, Han ^a   Hui, Li ^a   Chuanbo, Gao ^a  

^a UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

Co doped; Growth temperature; Slow positron beam; ZnO films

Indexed keywords

ELECTRONS; FILM PREPARATION; GROWTH TEMPERATURE; II-VI SEMICONDUCTORS; METALLIC FILMS; PARTICLE BEAMS; POSITRONS; PULSED LASER DEPOSITION; SAPPHIRE; ZINC OXIDE; ZINC SULFIDE;

C-PLANE SAPPHIRE; CO-DOPED; CO-DOPED ZNO; EFFECTIVE DIFFUSION LENGTH; POSITRON BEAMS; SLOW POSITRON BEAM; WURTZITE ZNO; ZNO FILMS;

COBALT;

EID: 64349085785     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

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