Thin Cr2O3 films for magnetoelectric data storage deposited by reactive E-beam evaporation

Ferroelectrics

Volumn 370, Issue 1 PART 4, 2008, Pages 147-152

  Borisov, P ^a   Hochstrat, A ^a   Shvartsman, V V ^a   Kleemann, W ^a   Eimuller T ^b   Rodríguez, A Fraile ^c  

^a UNIVERSITY OF DUISBURG ESSEN   (Germany)

^b RUHR UNIVERSITY BOCHUM   (Germany)

^c PAUL SCHERRER INSTITUTE   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIFERROMAGNETS; CHEMICAL ENVIRONMENT; DATA STORAGE; ELECTRICAL DATA; MAGNETIC MEMORIES; MAGNETOELECTRIC MATERIALS; MAGNETORESISTIVE DATA; OUT-OF PLANE; RANDOM ACCESS MEMORIES; REACTIVE E-BEAM EVAPORATION; SAPPHIRE SUBSTRATES; SURFACE CHARACTERIZATION; X RAY DIFFRACTOMETRY;

ABSORPTION SPECTROSCOPY; ATOMIC FORCE MICROSCOPY; COMPOSITE MICROMECHANICS; EVAPORATION; FERROELECTRICITY; MAGNETIC STORAGE; RANDOM ACCESS STORAGE; VAPORS; X RAY DIFFRACTION ANALYSIS;

CHROMIUM;

EID: 64149098968     PISSN: 00150193     EISSN: 15635112     Source Type: Journal    
DOI: 10.1080/00150190802384518     Document Type: Conference Paper

References (19)

1. T. M. Maffitt, J. K. DeBrosse, J. A. Gabric, E. T. Gow, M. C. Lamorey, J. S. Parenteau, D. R. Willmott, M. A. Wood, and W. J. Gallagher. Design considerations for MRAM. IBM J. Res. & Dev. 50, 25 (2006).
2. K. Kim and J. Lee. Integration of lead zirconium titanate thin films for high density ferroelectric random access memory. J. Appl. Phys. 100, 051604 (2006).
3. X. Chen, A. Hochstrat, P. Borisov, and W. Kleemann. Magnetoelectric exchange bias systems in spintronics. Appl. Phys. Lett. 89, 202508 (2006).
4. International patent application PCT/EP2006/002892.
5. M. N. Baibich, J. M. Broto, A. Fert, F. Nguyen Van Dau, F. Petroff, P. Eitenne, G. Creuzet, A. Friederich, and J. Chazelas. Giant Magnetoresistance of (001)Fe/(001)Cr Magnetic Superlattices. Phys. Rev. Lett. 61, 2472 - 2475 (1988).
6. M. Jullière. Tunneling between ferromagnetic films. Phys. Lett. A. 225 - 226 (1975).
7. For a review see J. Nogues and I. K. Schuller, Exchange Bias. J. Magn. Magn. Mater. 192, 203 (1999).
8. For a review see M. Fiebig, Revival of the magnetoelectric effect. J. Phys. D: Appl. Phys. 38, R123 (2005).
9. P. Borisov, A. Hochstrat, X. Chen, and W. Kleemann. Multiferroically composed exchange bias systems. Phase Trans. 79, 1123 (2006)
10. D. N. Astrov. Magnetoelectric Effect in chromium oxide. Sov. Phys. JETP. 11, 708 (1960);
11. 13, 729 (1961).
12. 3 Powders. Phys. Rev. 130, 986 - 988 (1963).
13. P. Borisov, A. Hochstrat, X. Chen, W. Kleemann, and C. Binek. Magnetoelectric Switching of Exchange Bias. Phys. Rev. Lett. 94, 117203 (2005).
14. P. Borisov, T. Eimüller, A. Fraile-Rodríguez, A. Hochstrat, X. Chen, and W. Kleemann. Application of the magnetoelectric effect to exchange bias. J. Magn. Magn. Mater. 310, 2313 - 2315 (2006).
15. 3 thin films. Mater. Res. Soc. Proc. 401, 61 - 66 (1996).
16. 4 thin films by oxygen-plasma-assisted molecular beam epitaxy. J. Cryst. Growth. 174, 446 - 454 (1997).
17. E. J. Verwey, P. W. Haaymann, and F. C. Romeijn. Physical properties and cation arrangement of oxides with spinel structures. J. Chem. Phys. 15, 181 - 187 (1947).
18. 2 and tetravalent chromium oxide derivatives. Crit. Rev. Solid State Mater. Sci. 7, 1 - 31 (1977).
19. 3 (0001). J. Appl. Phys. 95, 7450 - 7452 (2004).