Effect of growth conditions and buffer layers on the metal-insulator transition in V2O3 thin films

Materials Research Society Symposium - Proceedings

Volumn 401, Issue , 1996, Pages 61-66

  Schuler, H ^a   Weissmann, G ^a   Renner, C ^a   Six, S ^a   Klimm, S ^a   Simmet, F ^a   Horn, S ^a  

^a UNIVERSITY OF AUGSBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRIC RESISTANCE MEASUREMENT; ELECTRONIC PROPERTIES; EVAPORATION; FILM GROWTH; HALL EFFECT; LIGHT TRANSMISSION; LOW ENERGY ELECTRON DIFFRACTION; PHASE TRANSITIONS; STRUCTURE (COMPOSITION); VANADIUM COMPOUNDS; X RAY DIFFRACTION;

BUFFER LAYERS; FILM THICKNESS; HALL EFFECT MEASUREMENTS; METAL INSULATOR TRANSITION; REACTIVE ELECTRON BEAM EVAPORATION; VANADIUM OXIDES;

THIN FILMS;

EID: 0029755821     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)