Polishing characteristics of 4H-SiC Si-face and C-face by plasma chemical vaporization machining

Materials Science Forum

Volumn 556-557, Issue , 2007, Pages 757-760

  Sano, Yasuhisa ^a   Watanabe, Masayo ^a   Yamamura, Kazuya ^a   Yamauchi, Kazuto ^a   Ishida, Takeshi ^a   Arima, Kenta ^a   Kubota, Akihisa ^b   Mori, Yuzo ^a  

^a OSAKA UNIVERSITY   (Japan)

^b KUMAMOTO UNIVERSITY   (Japan)

Author keywords

Atmospheric Pressure Plasma; Etching; PCVM; Plasma Chemical Vaporization Machining; Polishing

Indexed keywords

ATMOSPHERIC CHEMISTRY; ATMOSPHERIC PRESSURE; CHEMICAL POLISHING; ETCHING; GRINDING (MACHINING); POLISHING; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; SURFACE ROUGHNESS; VAPORIZATION; WIDE BAND GAP SEMICONDUCTORS;

ATMOSPHERIC PRESSURE PLASMAS; CONVENTIONAL MACHINING; HIGH REMOVAL RATES; LOW PRESSURE PLASMA; PCVM; PLASMA CHEMICAL VAPORIZATION MACHINING; RADICAL DENSITIES; SILICON CARBIDES (SIC);

POWER SEMICONDUCTOR DEVICES;

EID: 38449122758     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.556-557.757     Document Type: Conference Paper

References (2)

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2. Y. Mori, K. Yamauchi, K. Yamamura, and Y. Sano: Rev. Sci. Instrum. Vol. 71 (2000), p. 4627.