Wetting layer formation in superlattices with Ge quantum dots on Si(1 0 0)

Microelectronics Journal

Volumn 40, Issue 4-5, 2009, Pages 782-784

  Nikiforov, A I ^a   Ulyanov, V V ^a   Timofeev, V A ^a   Pchelyakov, O P ^a  

^a ENERGY SYSTEMS INSTITUTE   (Russian Federation)

Author keywords

Diffraction; Epitaxy; Ge; Quantum dot; Si

Indexed keywords

CRYSTAL GROWTH; DIFFRACTION; GERMANIUM; OPTICAL WAVEGUIDES; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTOR QUANTUM DOTS; SILICON; WETTING;

ELASTIC STRAINS; EPITAXY; GE; GE QUANTUM DOTS; LAYER-BY-LAYER GROWTHS; QUANTUM DOT; REFLECTION HIGH-ENERGY ELECTRON DIFFRACTIONS; REPLICATION NUMBERS; SI; SI(1 0 0 ); SILICON SPACERS; WETTING LAYERS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 63749118891     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2008.11.014     Document Type: Article

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