Two-photon-enhanced three-photon absorption in transition-metal-doped semiconductor quantum dots

Journal of Optics A: Pure and Applied Optics

Volumn 11, Issue 2, 2009, Pages

  Feng, X B ^a   Xing, G C ^a   Ji, W ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

Defect state; Three photon absorption; Transition metal doped semiconductor quantum dots (d QDs); Two photon absorption

Indexed keywords

ABSORPTION; ELECTRIC CONDUCTIVITY; FLUORESCENCE; LIGHT ABSORPTION; LUMINESCENCE OF ORGANIC SOLIDS; MACHINE DESIGN; METAL IONS; MULTIPHOTON PROCESSES; OPTICAL MATERIALS; PHOTONS; SEMICONDUCTOR DOPING; SEMICONDUCTOR MATERIALS; TRANSITION METALS;

BAND GAPS; DEFECT STATE; DESIGN AND OPTIMIZATIONS; ENHANCEMENT MECHANISMS; EXCITED FLUORESCENCES; EXCITONIC STATE; NEAR-INFRARED SPECTRAL REGIONS; POTENTIAL APPLICATIONS; THREE PHOTON ABSORPTION (3PA); THREE PHOTONS; THREE-PHOTON ABSORPTION; TRANSITION-METAL-DOPED SEMICONDUCTOR QUANTUM DOTS (D-QDS); TWO PHOTONS; TWO-PHOTON ABSORPTION; TWO-PHOTON TRANSITIONS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 63649124147     PISSN: 14644258     EISSN: 17413567     Source Type: Journal    
DOI: 10.1088/1464-4258/11/2/024004     Document Type: Article

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