Formation energies of antisite defects in Y3 Al5 O12: A first-principles study

Applied Physics Letters

Volumn 94, Issue 12, 2009, Pages

  Liu, Bo ^a   Gu, Mu ^a   Liu, Xiaolin ^a   Huang, Shiming ^a   Ni, Chen ^a  

^a TONGJI UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

FILM GROWTH; FILM PREPARATION; GRAIN BOUNDARIES; OZONE WATER TREATMENT; SINGLE CRYSTALS; SOLID STATE PHYSICS;

ANTI-SITE DEFECTS; DEFECT CONCENTRATIONS; FIRST-PRINCIPLES CALCULATIONS; FIRST-PRINCIPLES STUDIES; FORMATION ENERGIES; HIGH TEMPERATURES; LOW TEMPERATURES; NON STOICHIOMETRIES; SINGLE CRYSTAL GROWTHS; SINGLE-CRYSTALLINE FILMS;

DEFECTS;

EID: 63549084491     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3109799     Document Type: Article

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