Microcrystalline-si solar cells by newly developed novel PECVD method at high deposition rate

Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion

Volumn B, Issue , 2003, Pages 1796-1799

  Hakuma, H ^a   Niira, K ^a   Senta, H ^a   Nishimura, T ^a   Komoda, M ^a   Okui, H ^a   Aramaki, K ^a   Okada, Y ^a   Tomita, K ^a   Higuchi, H ^a   Arimune, H ^a  

^a KYOCERA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION RATE; LIGHT-INDUCED DEGRADATION; SINGLE JUNCTIONS; SPECTRAL RESPONSE;

CRYSTALLINE MATERIALS; DEGRADATION; HYDROGEN; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON; SUBSTRATES; THROUGHPUT;

SILICON SOLAR CELLS;

EID: 6344285886     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. K.Niira et al, 12th PVSEC (2001) 433.
2. H.Hakuma et al, 17th EPSEC (2002) 2873.
3. T.Itoh et al, Thin Solid Films 395 (2001) 217.
4. M.Takai et al, Proc. Plasma Science Symp. (2001) and 18th Symp. on Plasma Processing (2001) 745.
5. M.Kondo et al, 12th PVSEC (2001) 41.
6. H.Keppner et al, Appl. Phys. A69 (1999) 169.