Growth kinetics of MgB2 layer and interfacial MgO layer during ex situ annealing of amorphous boron film

Journal of Materials Research

Volumn 19, Issue 10, 2004, Pages 3081-3089

  Kim, Hyun Mi ^a   Yim, Sung Soo ^a   Kim, Ki Bum ^a   Moon, Seung Hyun ^a   Kim, Young Woon ^a   Kang, Dae Hwan ^b  

^a Seoul National University   (South Korea)

^b Korea Institute of Science and Technology   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ANNEALING; BORON; CRYSTAL STRUCTURE; EVAPORATION; GROWTH KINETICS; MAGNESIA; MORPHOLOGY; SURFACES; TRANSMISSION ELECTRON MICROSCOPY; VAPORS;

BORON FILM; CRYSTAL FORMATION; GROWTH RATE; INTERFACIAL LAYER; THIN LAYERS;

AMORPHOUS FILMS;

EID: 6344258495     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.2004.0383     Document Type: Article

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