MEMS simulation in heavily doped silicon devices

2001 International Conference on Modeling and Simulation of Microsystems - MSM 2001

Volumn , Issue , 2001, Pages 346-349

  Matsuda, K ^a   Kanda, Y ^b  

^a NARUTO UNIVERSITY OF EDUCATION   (Japan)

^b Toyo University   (Japan)

Author keywords

Heavily doping; MEMS; Mobility; Piezoresistance

Indexed keywords

APPROXIMATION THEORY; BAND STRUCTURE; COMPUTER SIMULATION; DOPING (ADDITIVES); FERMI LEVEL; SEMICONDUCTOR DEVICES; SILICON; STRESSES;

CARRIER TRANSFER; DIELECTRIC FUNCTION; PIEZORESISTANCE (PR);

MICROELECTROMECHANICAL DEVICES;

EID: 6344241989     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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