Microcrystalline silicon thin film solar cells prepared by Hot Wire Cell method

Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion

Volumn B, Issue , 2003, Pages 1772-1775

  Ide, Yoshinori ^a   Saito, Yuji ^a   Yamada, Akira ^a   Konagai, Makoto ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BOTTOM CELLS; GROWTH RATES; HW-CELL METHODS; PYROLYTIC DISSOCIATION;

DEPOSITION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HYDROGEN; PARAMETER ESTIMATION; SECONDARY ION MASS SPECTROMETRY; SILICON WAFERS; SINGLE CRYSTALS; THIN FILMS;

SOLAR CELLS;

EID: 6344231794     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. M. Ichikawa, T. Tsushima, A. Yamada and M. Konagai, "High-Rate Deposition of Polycrystalline Silicon Thin Films by Hot Wire Cell Method Using Disilane", Sol. Energy Mater. & Sol. Cells, 66 (2001) 225.
2. S. Miyajima, A. Yamada and M. Konagai, "Highly Conductive Microcrystalline Silicon Carbide Films Deposited by the Hot Wire Cell Method and Its Appliaction to Amorphous Silicon Solar Cells", Thin Solid Films (2003) in press.
3. st International Conference on Cat-CVD (Hot-Wire CVD) Process (2000) 73.
4. Y. Ide, K. Asakusa, A. Yamada and M. Konagai "Amorphous Silicon Thin Films Prepared by Hot Wire Cell Method and Its Application to Solar Cells", Jpn. J. Appl. Phys., 42 (2003) 1521.