All-GaAs/AlGaAs readout circuit for quantum-well infrared detector focal plane array

IEEE Transactions on Electron Devices

Volumn 44, Issue 11, 1997, Pages 1807-1812

  Umansky, Vladimir ^a,b   Bunin, Gregory ^a,b   Gartsman, Konstantin ^a,b   Sharman, Charles ^a   Almuhannad, R ^a   Heiblum, Moty ^b   Bar Joseph, Israel ^b   Meirav, U ^b  

^a WEIZMANN INSTITUTE OF SCIENCE   (Israel)

^b Synergy Semiconductor   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; CURRENT VOLTAGE CHARACTERISTICS; FIELD EFFECT TRANSISTORS; HYBRID INTEGRATED CIRCUITS; INFRARED DETECTORS; INTEGRATED CIRCUIT MANUFACTURE; LEAKAGE CURRENTS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS; TRANSCONDUCTANCE;

HYBRID READOUT CIRCUITS; INPUT REFERRED NOISE VOLTAGE; MODULATION DOPED FIELD EFFECT TRANSISTORS (MODFET); QUANTUM WELL INFRARED PHOTODETECTOR FOCAL PLANE ARRAYS (QWIP FPA);

READOUT SYSTEMS;

EID: 0031271025     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.641346     Document Type: Article

References (13)

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