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ECS Transactions

Volumn 16, Issue 12, 2009, Pages 3-11

Controlled structure of zinc oxide by means of side flow type MOCVD

(4) Yoshii, Naoki a Nakamura, Atsushi b Hosaka, Shigetoshi a Temmyo, Jiro b

a TOKYO ELECTRON LTD (Japan)

b SHIZUOKA UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BELTS; CRYSTAL STRUCTURE; CRYSTALS; ELECTRONIC EQUIPMENT; II-VI SEMICONDUCTORS; NANOBELTS; NANORODS; NANOSENSORS; NANOWIRES; OXIDE MINERALS; PHOTONIC DEVICES; SAPPHIRE; SUPERCONDUCTING FILMS; THERMOELECTRIC EQUIPMENT; THIN FILM CIRCUITS; THIN FILMS;

CONTROLLED STRUCTURES; CRYSTAL QUALITIES; FILM STRUCTURE; FLOW TYPE; HIGH TEMPERATURE; TEMPERATURE CONDITIONS; ZNO NANOROD;

ZINC OXIDE;

EID: 63149169904 PISSN: 19385862 EISSN: 19386737 Source Type: Conference Proceeding
DOI: 10.1149/1.2985837 Document Type: Conference Paper

Times cited : (5)

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