Power fluctuations of a weakly optically-injected semiconductor laser in a period-one state

Optics Communications

Volumn 282, Issue 10, 2009, Pages 2074-2080

  Stolz, C A ^a   Labukhin, D ^a   Zakhleniuk, N ^a   Loudon, R ^a   Adams, M J ^a  

^a UNIVERSITY OF ESSEX   (United Kingdom)

Author keywords

Optically injected semiconductor laser; Period one; Relaxation oscillation frequency; Spatio temporal effects

Indexed keywords

ELECTRIC CONDUCTIVITY; HETEROJUNCTIONS; LASERS; MOTION ESTIMATION; POWER SPECTRUM; SEMICONDUCTOR MATERIALS;

DETUNING; FREQUENCY SPECTRUMS; INTERNAL OSCILLATIONS; OPTICALLY-INJECTED SEMICONDUCTOR LASER; PERIOD-ONE; PHYSICAL EFFECTS; POWER FLUCTUATIONS; POWER OUTPUTS; RELAXATION OSCILLATION FREQUENCY; ROUND-TRIP TIME; SLAVE LASERS; SPATIO-TEMPORAL DYNAMICS; SPATIO-TEMPORAL EFFECTS; THREE COMPONENTS;

SEMICONDUCTOR LASERS;

EID: 63149149580     PISSN: 00304018     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.optcom.2009.02.028     Document Type: Article

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