Locking bandwidth of optically injected Fabry-Perot semiconductor lasers for high injection strengths

IET Optoelectronics

Volumn 2, Issue 6, 2008, Pages 223-230

  Stolz, C A ^a   Labukhin, D ^a   Zakhleniuk, N ^a   Adams, M J ^a  

^a UNIVERSITY OF ESSEX   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; ELECTRIC CONDUCTIVITY; FABRY-PEROT INTERFEROMETERS; HETEROJUNCTIONS; LASERS; REQUIREMENTS ENGINEERING; SEMICONDUCTOR MATERIALS; TELECOMMUNICATION SYSTEMS;

COMMERCIAL SOFTWARES; DETUNING; ELECTRON CONCENTRATIONS; FP MODELS; HIGH INJECTIONS; INJECTION RATIOS; LINEWIDTH ENHANCEMENT FACTORS; LOCKING BANDWIDTHS; LONGITUDINAL VARIATIONS; OPTICAL POWERS; RATE EQUATIONS; SIMULATED RESULTS; SLAVE LASERS; SPATIAL VARIATIONS;

SEMICONDUCTOR LASERS;

EID: 57649096505     PISSN: 17518768     EISSN: None     Source Type: Journal    
DOI: 10.1049/iet-opt:20080029     Document Type: Article

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