Relations between compositional modulation and atomic ordering degree in thin films of ternary III-V semiconductor alloys

Chinese Physics B

Volumn 17, Issue 12, 2008, Pages 4619-4621

  Zhang, Li Ping ^a   Zheng, Zhen ^b   Liang, Jia Chang ^a   Le, Xiao Yun ^c   Zou, Chao ^d   Liu, Huan Li ^a   Liu, Ye ^a  

^a CIVIL AVIATION UNIVERSITY OF CHINA   (China)

^b SHENZHEN INSTITUTES OF ADVANCED TECHNOLOGY   (China)

^c BEIHANG UNIVERSITY   (China)

^d China Electronics Standardization Institute   (China)

Author keywords

Atomic ordering degree; Enhanced factor; Ternary III V semiconductor alloy; Thin film

Indexed keywords

ALLOYS; ATOMIC SPECTROSCOPY; ATOMS; CERIUM ALLOYS; ELECTRIC CONDUCTIVITY; MODULATION; NUCLEAR MAGNETIC RESONANCE SPECTROSCOPY; REAL TIME SYSTEMS; SEMICONDUCTOR MATERIALS; THIN FILM DEVICES; THIN FILMS;

ATOMIC ORDERING DEGREE; B ATOMS; COMPOSITIONAL MODULATIONS; ENHANCED FACTOR; FINE STRUCTURES; MODULATION FACTORS; NMR SPECTRUM; ORDERING DEGREES; SUB-LATTICES; TERNARY III-V SEMICONDUCTOR ALLOY;

VANADIUM ALLOYS;

EID: 62649149283     PISSN: 16741056     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-1056/17/12/047     Document Type: Article

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